Effects of band non-parabolicity on electron drift velocity in silicon above room temperature

1975 ◽  
Vol 17 (1) ◽  
pp. xii
Author(s):  
C. Jacoboni ◽  
R. Minder ◽  
G. Majni
Keyword(s):  
Drift Velocity ◽  
Room Temperature ◽  
Electron Drift Velocity ◽  
Electron Drift

Hole and electron drift velocity in CdSe at room temperature

1972 ◽  
Vol 11 (1) ◽  
pp. 105-107 ◽  
Author(s):  
C. Canali ◽  
F. Nava ◽  
G. Ottaviani ◽  
C. Paorici
Keyword(s):  
Drift Velocity ◽  
Room Temperature ◽  
Electron Drift Velocity ◽  
Electron Drift

Electric Field Dependence of the Electron Drift Velocity in Hydrogenated Amorphous Silicon

1989 ◽  
Vol 149 ◽  
Author(s):  
R. I. Devlen ◽  
E. A. Schiff ◽  
J. Tauc ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Electric Fields ◽  
Drift Velocity ◽  
Applied Field ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Electric Field Dependence ◽  
Hydrogenated Amorphous

ABSTRACTWe present room temperature measurements on the electron drift velocity in hydrogenated amorphous silicon (a-Si:H) for large electric fields (1.3 × 105 to 3 × 105 cm/s). The experimental time resolution was ˜ 1ps and velocities as high as 8 × 105 cm/s were observed. The electron transport was non-dispersive, and the velocity was found to be a superlinear function of the applied field.

Electron drift velocity versus electric field in GaAs

1986 ◽  
Vol 29 (12) ◽  
pp. 1295-1296 ◽  
Author(s):  
Chian S. Chang ◽  
Harold R. Fetterman
Keyword(s):  
Electric Field ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Velocity Versus ◽  
Electron Drift
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