A performed model for band-gap narrowing of heavily doped semiconductors

The surface photoeffect in a heavily doped semiconductor was investigated using the influences of band-gap narrowing and carrier degeneracy. Variation of the surface photovoltage with the normalized surface potential is presented graphically. A comparison with earlier work done under identical conditions is made. The temperature-dependent behaviour is also studied.

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Band gap narrowing in heavily doped silicon

Solid-State Electronics ◽

10.1016/0038-1101(82)90180-0 ◽

1982 ◽

Vol 25 (9) ◽

pp. 909-911 ◽

Cited By ~ 17

Author(s):

S.R. Dhariwal ◽

V.N. Ojha

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron

Journal of Applied Physics ◽

10.1063/1.4902066 ◽

2014 ◽

Vol 116 (19) ◽

pp. 194505 ◽

Cited By ~ 39

Author(s):

Di Yan ◽

Andres Cuevas

Keyword(s):

Band Gap ◽

Energy Band ◽

Energy Band Gap ◽

Empirical Determination ◽

Heavily Doped ◽

Band Gap Narrowing

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Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices

phys stat sol (a) ◽

10.1002/pssa.2211550229 ◽

1996 ◽

Vol 155 (2) ◽

pp. 547-553 ◽

Cited By ~ 2

Author(s):

H. Van Cong ◽

G. Debiais

Keyword(s):

Band Gap ◽

Current Density ◽

Minority Carrier ◽

Silicon Devices ◽

Heavily Doped ◽

Band Gap Narrowing

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Electrical band-gap narrowing in - and heavily doped silicon at 300K

Microelectronics Reliability ◽

10.1016/0026-2714(87)90119-3 ◽

1987 ◽

Vol 27 (4) ◽

pp. 790

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Surface photovoltage in a heavily doped high–low junction in equilibrium

Canadian Journal of Physics ◽

10.1139/p91-104 ◽

1991 ◽

Vol 69 (5) ◽

pp. 616-620

Author(s):

S. S. De ◽

A. K. Ghosh ◽

T. K. Pattanayak

Keyword(s):

Band Gap ◽

Surface Potential ◽

Surface Photovoltage ◽

Densities Of States ◽

Heavily Doped ◽

Band Gap Narrowing

Surface photovoltage in a heavily doped high-low junction in equilibrium was investigated analytically taking into account the effects of band-gap narrowing. The dependence of the normalized surface photovoltage on surface potential for different values of the surface densities of states and also for various temperatures were studied. The results are shown graphically.

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