Magnetic field dependence of the metal-insulator transition in (PER)2Pt(mnt)2 and (PER)2Au(mnt)2

1991 ◽  
Vol 80 (6) ◽  
pp. 391-394 ◽  
Author(s):  
Grégoire Bonfait ◽  
Elsa B. Lopes ◽  
Manuel J. Matos ◽  
Rui T. Henriques ◽  
Manuel Almeida
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

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