Fine structure of low-energy secondary electron emission spectra in platinum single crystal

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

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Low Energy Electron Beam Induced Charging and Secondary Electron Emission Properties of FEP Film Used on Satellite Surfaces

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.132.790 ◽

2012 ◽

Vol 132 (9) ◽

pp. 790-796 ◽

Cited By ~ 1

Author(s):

Haruhisa Fujii ◽

Teppei Okumura ◽

Masato Takahashi

Keyword(s):

Electron Beam ◽

Electron Emission ◽

Secondary Electron ◽

Secondary Electron Emission ◽

Low Energy ◽

Energy Electron ◽

Emission Properties ◽

Low Energy Electron

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A Monte Carlo calculation of low-energy secondary electron emission from metals

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/7/9/318 ◽

1974 ◽

Vol 7 (9) ◽

pp. 1303-1315 ◽

Cited By ~ 85

Author(s):

T Koshikawa ◽

R Shimizu

Keyword(s):

Monte Carlo ◽

Electron Emission ◽

Secondary Electron ◽

Monte Carlo Calculation ◽

Secondary Electron Emission ◽

Low Energy

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CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENIY KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA ◽

10.6060/tcct.20165908.30y ◽

2018 ◽

Vol 59 (8) ◽

pp. 21

Author(s):

Vladimir Yu. Sadovoy ◽

Vladimir D. Blank ◽

Sergey A. Terentiev ◽

Dmitriy V. Teteruk ◽

Sergey Yu. Troschiev

Keyword(s):

Single Crystal ◽

Electron Emission ◽

Crystallographic Orientation ◽

Beam Energy ◽

Secondary Electron ◽

Secondary Electron Emission ◽

Primary Beam ◽

Emission Coefficient ◽

Secondary Electron Emission Coefficient ◽

Single Crystal Diamond

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.

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