The Design of the Emission Layer for Electron Multipliers

The electron multipliers gain is closely related to the secondary electron emission coefficient (SEE) of the emission layer materials. The SEE is closely related to the thickness of the emission layer. If the emission layer is thin, the low SEE causes the low gain of electron multipliers. If the emission layer is thick, the conductive layer can't timely supplement charge to the emission layer, the electronic amplifier gain is low too. The electron multipliers usually choose Al2O3 and MgO film as the emission layer because of the high SEE level. MgO easy deliquescence into Mg(OH)2 resulting in the lower SEE level. The SEE level of Al2O3 is lower than MgO, but Al2O3 is stable. We designed a spherical system for testing the SEE level of materials, and proposed to use lowenergy secondary electrons instead of low-energy electron beam for neutralization to measuring the SEE level of Al2O3, MgO, MgO/Al2O3, Al2O3/MgO, and precisely control the film thickness by using atomic layer deposition (ALD). We propose to compare the SEE under the adjacent incident electrons energy to partition the SEE value of the material, and obtain four empirical formula for the relationship between SEE and thickness. Through experiments and calculations, we put forward a new emission layer for electron multipliers, including 2~3 nm Al2O3 buffer layer, 9nm MgO main-body layer, 1nm protective layer or 0.3nm enhancement layer. We can apply this new emission layer to channel electron multiplier (CEM), microchannel plate (MCP), separate electron multiplier.

Study on the Effect of Structure Parameters on NO Oxidation in DBD Reactor under Oxygen-Enriched Condition

To improve NO oxidation and energy efficiency, the effect of dielectric barrier discharge reactor structure on NO oxidation was studied experimentally in simulated diesel exhaust at atmospheric pressure. The mixture of 15% O2/N2 (balance)/860 ppm NOX (92% NO + 8% NO2) was used as simulated diesel exhaust. The results show that DBD reactor with 100-mm electrode length has the highest oxidation degree of NOX and energy efficiency. NO oxidation efficiency is promoted and the generation of NO is inhibited significantly by increasing the inner electrode diameter. Increasing the inner electrode diameter not only improve the E/N, but also makes the distribution of E/N more concentrated in the gas gap. The secondary electron emission coefficient (γ) of electrode material is closely related to electron energy and cannot be considered as a constant, which causes the different performance of electrode material for NO oxidation under different gas gap conditions. Compared with the rod electrode, the screw electrode has a higher electric field strength near the top of the screw, which promotes the generation of N radicals and inhibits the generation of O radicals. Rod electrode has a higher NO oxidation and energy efficiency than screw electrode under oxygen-enriched condition.

Ti-doped MgO thin film by magnetron sputtering for cesium frequency standard

The main component of magnetically selected cesium frequency standard is electron multiplier. Its working principle is to magnify cesium beam signal by emitting secondary electron through surface of material. Magnesium oxide (MgO) has been adopted due to its excellent capability to emit secondary electron. There are many ways to prepare MgO thin film, including evaporation, pulsed laser deposition and MOCVD. It has been studied that doping can be used to enhance its emission capability and decrease its working potential of the thin film. In this paper, Ti-doped MgO thin films were deposited by magnetron sputtering method. Titanium metal and MgO ceramic were co-sputtered in oxygen containing argon ambient with DC and RF power source, respectively. XRD results show that the deposited film has the texture of (100) and (110) orientation. The ratio of Ti/Mg were consistent in XPS and EDS. SEM and AFM show that the film is polycrystalline. Electron multiplier device was assembled, and the secondary electron emission coefficient of the Ti-doped MgO film is greater than that of the undoped one, especially 36% higher at low primary electron energy of 200 eV which is meaningful to cesium atomic frequency standard.

Normal glow discharge: comparison of calculated and experimental data

The combined numerical and physical modeling of a glow discharge between plane disk electrodes in molecular nitrogen is performed at pressures р = 3 and 5 Tor. The satisfactory description of experimental data by the drift-diffusion model is shown. The simultaneous analysis of experimental and calculated data has permitted identification of the normal burning regime of a glow discharge. However, the essential effect of model parameters such as the secondary electron emission coefficient and the first Townsend coefficient on the calculated voltage-current characteristic has been demonstrated in this case.

Эмиссионные свойства сплава Pb-Ba, активированного лазерным облучением

A comparative analysis of the effect of temperature and laser activation on the values of the secondary electron emission coefficient (SEEC) and the work function eφ of the alloy Pd-Ba (Ba - 1.5 at.%) was carried out. It is shown that the optimum energy density of laser irradiation is ~ 2 J∙cm-2. The main reasons for the decrease in the emission efficiency of Pd-Ba for prolonged warming have been determined.

CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.