D.C. measurement of the space charge capacitance and impurity profile beneath the gate of an MOST

1971 ◽  
Vol 14 (11) ◽  
pp. 1099-1106 ◽  
Author(s):  
J.M. Shannon
2012 ◽  
Vol 358 (17) ◽  
pp. 2007-2010 ◽  
Author(s):  
O.A. Maslova ◽  
M.E. Gueunier-Farret ◽  
J. Alvarez ◽  
A.S. Gudovskikh ◽  
E.I. Terukov ◽  
...  

2008 ◽  
Vol 73 (3) ◽  
pp. 351-367 ◽  
Author(s):  
Vladimir Jovic ◽  
Borka Jovic

In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc) and space charge resistance (Rsc) of these films were determined. The donor density (Nsc), flat band potential (Efb) and thickness of the space charge layer (dsc) for such oxide films were determined from the corresponding Mott-Schottky (M-S) plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.


1965 ◽  
Vol 36 (10) ◽  
pp. 3206-3211 ◽  
Author(s):  
Fred P. Heiman ◽  
George Warfield

1976 ◽  
Vol 34 (1) ◽  
pp. K43-K46 ◽  
Author(s):  
J. E. Parrott ◽  
M. Tieng

1974 ◽  
Vol 26 (1) ◽  
pp. 89-97 ◽  
Author(s):  
J. E. Parrott

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