Photoconductivity of Intrinsic Semiconductor Phthalocyanine-Based Covalent Organic Polymer with Benzimidazole Linkage

Novel phthalocyanine-based benzimidazole linked conjugated covalent organic polymer (NiPc-COP1) have been synthesized with multiple randomly ordered crystalline morphology. This unique alignment leads to significantly enhanced panchromatic light-absorption capability, thus high photoconductivity with high photoresponce speed.

Charge transfer doping with an organic layer to achieve a high-performance p-type WSe2 transistor

Two-dimensional WSe2, a transition metal dichalcogenide (TMD), is a promising intrinsic semiconductor due to its outstanding electrical and mechanical properties, useful for next-generation electronics. However, its pn coupling and logic...

Synthesis, structural characterization, and electronic structure of the novel Zintl phase Ba2ZnP2

The novel Zintl phase dibarium zinc diphosphide (Ba2ZnP2) was synthesized for the first time. This was accomplished using the Pb flux technique, which allowed for the growth of crystals of adequate size for structural determination via single-crystal X-ray diffraction methods. The Ba2ZnP2 compound was determined to crystallize in a body-centered orthorhombic space group, Ibam (No. 72). Formally, this crystallographic arrangement belongs to the K2SiP2 structure type. Therefore, the structure can be best described as infinite [ZnP2]4− polyanionic chains with divalent Ba2+ cations located between the chains. All valence electrons are partitioned, which conforms to the Zintl–Klemm concept and suggests that Ba2ZnP2 is a valence-precise composition. The electronic band structure of this new compound, computed with the aid of the TB–LMTO–ASA code, shows that Ba2ZnP2 is an intrinsic semiconductor with a band gap of ca 0.6 eV.

Synthesis and structural characterization of the type-I clathrates K8Al x Sn46–x and Rb8Al x Sn46–x (x ≃ 6.4–9.7)

Exploratory studies in the systems A–Al–Sn (A = K and Rb) yielded the clathrates K8Al x Sn46–x (potassium aluminium stannide) and Rb8Al x Sn46–x (rubidium aluminium stannide), both with the cubic type-I structure (space group Pm\overline{3}n, No. 223; a ≃ 12.0 Å). The Al:Sn ratio is close to the idealized A 8Al8Sn38 composition and it is shown that it can be varied slightly, in the range of ca ±1.5, depending on the experimental conditions. Both the (Sn,Al)20 and the (Sn,Al)24 cages in the structure are fully occupied by the guest alkali metal atoms, i.e. K or Rb. The A 8Al8Sn38 formula has a valence electron count that obeys the valence rules and represents an intrinsic semiconductor, while the experimentally determined compositions A 8Al8±x Sn38∓x suggest the synthesized materials to be nearly charge-balanced Zintl phases, i.e. they are likely to behave as heavily doped p- or n-type semiconductors.

Fabrication of g-C3N4 Microspheres without Template via Microwave Heating Method

This research reported the preparation of the graphitic carbon nitride (g-C3N4) microspheres without template via microwave heating method using melamine as precursor. The as-synthesized samples were characterized by powder X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), field-emission scanning electron microscopy (FE-SEM), ultraviolet-visible (UV-Vis) and photoluminescence (PL). Results showed that the g-C3N4 microspheres were successfully synthesized. The diameters of the microspheres range from 800 nm to 1.5 μm, and the shell thickness is about 50 nm. UV-Vis absorption edge and PL peak of the g-C3N4 were shown at 457 nm and 468 nm, respectively, indicating the intrinsic semiconductor-like absorption in the blue region of the visible spectrum. This was the first attempt to prepare g-C3N4 microspheres without template via microwave heating approach, which was proved to be facile and effective.