Current-voltage characteristics and capacitance of single grain boundaries in semiconducting BaTiO3 ceramics

1973 ◽  
Vol 16 (5) ◽  
pp. 617-622 ◽  
Author(s):  
P. Gerthsen ◽  
B. Hoffmann
Keyword(s):  
Grain Boundaries ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Measurement of current voltage characteristics of single grain boundaries in melt textured bulk YBa2Cu3Ox

1994 ◽  
Vol 64 (1) ◽  
pp. 109-111 ◽  
Author(s):  
C. Sarma ◽  
G. Schindler ◽  
D. G. Haase ◽  
C. C. Koch ◽  
A. M. Saleh ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Effect of MnO on the Electrical Properties of Nb-Doped SrTiO3 Varistor

1998 ◽  
Vol 547 ◽  
Author(s):  
S.-H. Kim ◽  
H.-W. Seon ◽  
Yoonho Kim
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Electronic States ◽  
Potential Barrier Height ◽  
Plane Analysis ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electrode Method ◽  
Single Grain ◽  
Mn Doped

AbstractThe effect of MnO on the electrical properties of Nb-doped SrTiO3 was investigated to understand the electronic states of grains and grain boundaries. Grain size and dielectric constant were decreased with increasing Mn-doped content from 0 to 0.07 mol%. However, it was observed that the non-linearity coefficient of Nb-doped SrTiO3 was changed from 5 to 43 with Mn-doped content increasing from 0 to 0.03 mol%. Current-voltage (I-V) characteristics, capacitance-voltage (C-V) measurement, complex plane analysis and impedance spectroscopy were performed to obtain the information about the electrical properties of grains and grain boundaries. The potential barrier height increased and the donor concentration decreased with increasing Mn-doped content. This phenomena, that the electrical properties of Nb-doped SrTiO3 were changed with the addition of Mn, would be determined by the effect which Mn-2-3 substituted for Ti sites. It was observed that the breakdown voltage of single grain boundary was changed from 3.8 V to 8.9 V when measured by micro-electrode method.

Effects of Grain Boundaries in Amorphous/Multicrystalline Silicon Heterojunction Photovoltaic Cells

2004 ◽  
Vol 836 ◽  
Author(s):  
M. Farrokh Baroughi ◽  
S. Sivoththaman
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Dark Current ◽  
Spectral Response ◽  
Simulation Software ◽  
Multicrystalline Silicon ◽  
Consistent Difference ◽  
Photovoltaic Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSpectral response and dark current-voltage characteristics of heterojunctions are used to investigate grain boundary degradation in photovoltaic properties of a-Si/mc-Si heterojunction solar cells. Measured spectral response inside the grain and on the grain boundary shows small but consistent QE degradation due to minority carrier recombination at the grain boundaries. No consistent difference is observed in dark current-voltage characteristics because of large diode area and periphery leakage current in the employed heterojunction diodes. Comparing measurement results and results from device modeling using the simulation software Medici, a recombination velocity of 4900 cm/sec is found at the grain boundaries of employed multicrystalline silicon wafer. The modeling and experimental results can also be used to define an effective grain area that serves as a measure of grain boundary recombination and the influence of grain size.

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