Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Vapor-Liquid-Solid Growth of Silicon-Based Nanowires for High Sensitive Sensor

2013 ◽  
Vol 534 ◽  
pp. 257-261 ◽  
Author(s):  
Hayato Sone ◽  
Yasuyuki Suda ◽  
Daiki Kubota ◽  
Sumio Hosaka
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Vapor Liquid Solid ◽  
Transmission Electron ◽  
Current Voltage ◽  
Vls Growth ◽  
Sensitive Sensor ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Vapor Liquid

Silicon-based nanowires (Si-NWs) were fabricated by vapor liquid solid (VLS) growth, and Si-NW device was prototyped using focused ion beam (FIB) processing. The needle shaped thin Si-NWs were formed at a substrate temperature between 1120 and 1313°C. The average and minimum diameters of the NWs were confirmed 60 nm and 44 nm, respectively. As the double-layered structure was observed in the NWs by transmission electron microscope images, it is possible that those are silicon-based NWs with Si core and SiO2shell structure. From current-voltage characteristics, the Si-NW device has a semiconducting property, and the estimated resistivity of the Si-NW is about 3.1 x 104Ωcm.

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

2015 ◽  
Vol 27 (19) ◽  
pp. 3002-3006 ◽  
Author(s):  
Ajuan Cui ◽  
Zhe Liu ◽  
Huanli Dong ◽  
Yujin Wang ◽  
Yonggang Zhen ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Break Junction ◽  
Single Grain ◽  
Nanogap Electrodes ◽  
Focused Ion Beam Milling

Current-Voltage Characteristic of C-RAM Nano-Cell-Element

2007 ◽  
Vol 121-123 ◽  
pp. 591-594
Author(s):  
Bo Liu ◽  
Zhi Tang Song ◽  
Song Lin Feng ◽  
Bomy Chen
Keyword(s):  
Focused Ion Beam ◽  
Bottom Electrode ◽  
Ion Beam ◽  
Random Access ◽  
Access Memory ◽  
Cell Element ◽  
Current Voltage ◽  
Beam Method ◽  
Current Voltage Characteristics ◽  
Contact Size

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge2Sb2Te5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.

Measuring Local Mechanical Properties using FIB Machined Cantilevers

2009 ◽  
Vol 1185 ◽  
Author(s):  
David Edward John Armstrong ◽  
Angus Jonathan Wilkinson ◽  
Steve George Roberts
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Size Dependence ◽  
Ion Beam ◽  
Polycrystalline Copper ◽  
Sharp Notch ◽  
Single Grain ◽  
Bismuth Alloy ◽  
Good Agreement

AbstractMicro-scale Focused Ion Beam (FIB) machined cantilevers were manufactured in single crystal copper, polycrystalline copper and a copper-bismuth alloy. These were imaged and tested in bending using a nanoindenter. Cantilevers machined inside a single grain of polycrystalline copper were tested to determine their (anisotropic) Young's modulus: results were in good agreement with values calculated from literature values for single crystal elastic constants. The size dependence of yield behavior in the Cu microcantilevers was also investigated. As the thickness of the specimen was reduced from 23μm to 1.7μm the yield stress increased from 300MPa to 900MPa. Microcantilevers in Cu-0.02%Bi were manufactured containing a single grain boundary of known character, with a FIB-machined sharp notch on the grain boundary. The cantilevers were loaded to fracture allowing the fracture toughness of grain boundaries of different misorientations to be determined.

Fabrication Using Focused Ion Beam Processing of Devices Employing Silicon-Based Nanowires Synthesized by Vapor-Liquid-Solid Growth

2013 ◽  
Vol 423-426 ◽  
pp. 125-129
Author(s):  
Hayato Sone ◽  
Yousuke Nakamura ◽  
Yasuyuki Suda ◽  
Sumio Hosaka
Keyword(s):  
Substrate Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vapor Liquid Solid ◽  
Current Voltage ◽  
Doped Silicon ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Undoped and B-doped silicon-based nanowires (SiNWs) were synthesized by vapor-liquid-solid growth, and SiNW devices using Au electrodes were prototyped using focused ion beam (FIB) processing. Needle-shaped thin SiNWs were formed at a substrate temperature between 1170 and 1313 °C. The average and minimum diameters of the B-doped SiNWs were 72 nm and 52 nm, respectively. According to the current-voltage characteristics, SiNW devices have ohmic properties, and the estimated resistivity of the undoped and B-doped SiNWs are about 3.8 × 103Ωcm and 1.7 × 103Ωcm, respectively.

Experimental Measurements of Grain Boundary Rotation Toward Bamboo in Post-Pattern Annealing

1996 ◽  
Vol 428 ◽  
Author(s):  
D. L. Barr ◽  
W. L. Brown ◽  
M. Ohring
Keyword(s):  
Grain Boundary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Measurements ◽  
Statistical Distributions ◽  
Before And After ◽  
Boundary Rotation ◽  
Inclination Angles ◽  
Single Grain ◽  
Line Direction

AbstractThe microstructure of 0.8.µm, A1(0.5% Cu) lines has been measured both before and after post-pattern annealing in nitrogen at various times and temperatures. Grain boundary inclinations in single grain segments of lines were determined from Focused Ion Beam (FIB) images of two surfaces of the lines. The statistical distributions of inclination angles before and after annealing reveal the tendency for boundaries to rotate to reduce their area. In these experiments the rotation stagnates with the normals to the grain boundaries having a distribution of inclinations with a FWHM of about 33 degrees around the line direction.

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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