Effects of grain boundaries on the current-voltage characteristics of polycrystalline silicon solar cells

1982 ◽  
Vol 29 (2) ◽  
pp. 225-236 ◽  
Author(s):  
A. Neugroschel ◽  
J.A. Mazer
2015 ◽  
Vol 24 (3) ◽  
pp. 326-339 ◽  
Author(s):  
Milan Padilla ◽  
Christian Reichel ◽  
Nikolaus Hagedorn ◽  
Andreas Fell ◽  
Roman Keding ◽  
...  

2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.


2004 ◽  
Vol 85 (18) ◽  
pp. 4222-4224 ◽  
Author(s):  
L. Ferraioli ◽  
P. Maddalena ◽  
A. Parretta ◽  
A. Wang ◽  
J. Zhao

1962 ◽  
Vol 84 (1) ◽  
pp. 33-38 ◽  
Author(s):  
C. Pfeiffer ◽  
P. Schoffer ◽  
B. G. Spars ◽  
J. A. Duffie

Current-voltage characteristics of silicon solar cells cooled by conduction or convection at radiation levels up to 60 langleys per minute are reported for several cell temperatures. Maximum power output noted was approximately 65 milliwatts per square centimeter. The use of cells as flux measuring devices is noted.


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