Determination of band-edge offset by weak field Hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1113-1116 ◽  
Author(s):  
Z. Shi ◽  
A. Lambrecht ◽  
M. Tacke
Keyword(s):  
Quantum Well ◽  
Weak Field ◽  
Hall Measurement ◽  
Band Edge ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy

1985 ◽  
Vol 46 (1) ◽  
pp. 51-53 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
P. W. Yu ◽  
Jasprit Singh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Quantum Well Structures ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

2007 ◽  
Author(s):  
Ding Ding ◽  
Shane R. Johnson ◽  
Jiang-Bo Wang ◽  
Shui-Qing Yu ◽  
Yong-Hang Zhang
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Spontaneous Emission ◽  
Quantum Well Structures

Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures

1988 ◽  
Vol 37 (11) ◽  
pp. 6278-6284 ◽  
Author(s):  
U. Cebulla ◽  
G. Tränkle ◽  
U. Ziem ◽  
A. Forchel ◽  
G. Griffiths ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spectroscopic Determination ◽  
Multiple Quantum ◽  
Quantum Well Structures
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