An XPS study of the adsorption of Re onto ZrO2: interface formation and film growth

1991 ◽  
Vol 251-252 ◽  
pp. 1023-1028 ◽  
Author(s):  
C. Morant ◽  
L. Galán ◽  
J.M. Sanz ◽  
F. Rueda
Keyword(s):  
Film Growth ◽  
Interface Formation ◽  
Xps Study

An XPS study of the adsorption of Re onto ZrO2: interface formation and film growth

1991 ◽  
Vol 251-252 ◽  
pp. A374
Author(s):  
C. Morant ◽  
L. Galán ◽  
J.M. Sanz ◽  
F. Rueda
Keyword(s):  
Film Growth ◽  
Interface Formation ◽  
Xps Study

In Situ Xps Studies of the Deposition of Thin Films from Tetrakis(Dimethylamido)Titaniumorganometaluc Precursor for Diffusion Barriers

1993 ◽  
Vol 309 ◽  
Author(s):  
G. Ruhl ◽  
R. Rehmet ◽  
M. Knoživá ◽  
S. Vepřek
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Diffusion Barriers ◽  
High Rate ◽  
Feature Size ◽  
In Situ Xps ◽  
Minimum Feature Size ◽  
Organometallic Precursors ◽  
Xps Study

AbstractWith the decreasing minimum feature size of integrated microcircuits, a low-temperature, chlorine-free CVD process is needed for the deposition of TiN diffusion barriers. A problem during the thermal deposition of titanium nitride from organometallic precursors, such as tetrakis(dimethylamido)titanium, is the high content of carbon in the films. In situ XPS study reveals that most of the carbon is present as CHx inclusions with a smaller but not negligible amount of carbidic component. This can be avoided by using ammonia, but the high rate of the reaction in the gas phase makes the control of the film growth difficult. Most of the problems can be resolved when using hydrogen afterglow.

XPS study of interface formation of CVD SiO2 on InSb

1981 ◽  
Vol 19 (3) ◽  
pp. 431-436 ◽  
Author(s):  
R. P. Vasquez ◽  
F. J. Grunthaner
Keyword(s):  
Interface Formation ◽  
Xps Study

XPS study of early stages of Al/Au interface formation

2009 ◽  
Vol 41 (10) ◽  
pp. 830-833 ◽  
Author(s):  
Yaroslav Polyak ◽  
Zdeněk Bastl
Keyword(s):  
Interface Formation ◽  
Early Stages ◽  
Xps Study

An XPS study of zinc oxide thin film growth on copper using zinc acetate as a precursor

1993 ◽  
Vol 223 (2) ◽  
pp. 341-347 ◽  
Author(s):  
Leong G. Mar ◽  
Peter Y. Timbrell ◽  
Robert N. Lamb
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Zinc Acetate ◽  
Film Growth ◽  
Thin Film Growth ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Xps Study

Polymer-metal interface formation and film growth on plasma and ion-treated polymer surfaces

1993 ◽  
Vol 20 (5) ◽  
pp. 416-420 ◽  
Author(s):  
S. Nowak ◽  
M. Collaud ◽  
G. Dietler ◽  
P. Schmutz ◽  
L. Schlapbach
Keyword(s):  
Film Growth ◽  
Polymer Surfaces ◽  
Metal Interface ◽  
Interface Formation ◽  
Polymer Metal

XPS Surface Composition Analysis During UV Laser Photodeposition of Al From Tiba on Si (100) Substrates: Direct Observation of the Prenucleation Regime

1987 ◽  
Vol 101 ◽  
Author(s):  
David A. Mantell ◽  
T.E. Orlowski
Keyword(s):  
Laser Processing ◽  
Film Growth ◽  
Surface Composition ◽  
Pulsed Laser ◽  
Composition Analysis ◽  
Uv Laser ◽  
Island Growth ◽  
Photochemical Decomposition ◽  
Xps Study

ABSTRACTAn in situ XPS study is made of the AI film growth from TIBA using an ArF pulsed laser on Si (100) substrates. It is found that the film is formed by the photochemical decomposition of the organometaliic on the surface. A metallic film is formed by island growth. These islands are covered with an organometaliic fragment layer of partially decomposed TIBA. The consequences of these observations toward understanding how laser processing can create prenucleation regions that catalyze film growth at temperatures below standard CVD temperatures are discussed.

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