Direct ion beam deposition for thin film formation

1982 ◽  
Vol 92 (1-2) ◽  
pp. 115-122 ◽  
Author(s):  
Jun Amano
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Thin Film Formation ◽  
Beam Deposition

Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

1991 ◽  
Vol 236 ◽  
Author(s):  
Nicole Herbots ◽  
O.C. Hellman ◽  
O. Vancauwenberghe
Keyword(s):  
Thin Film ◽  
Chemical Reactions ◽  
Degrees Of Freedom ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Reactivity ◽  
Ion Beam ◽  
Low Energy ◽  
Low Energy Ions ◽  
Beam Deposition

AbstractThree important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. The fundamental understanding and new applications of low temperature kinetics induced by low energy ions in thin film growth and surface processing of semiconductors are reviewed. It is shown that the mechanism of IBD growth can be understood and computed quantitatively using a simple model including ion induced defect generation and sputtering, elastic recombination, thermal diffusion, chemical reactivity, and desorption The energy, temperature and dose dependence of growth rate, epitaxy, and chemical reaction during IBD is found to be controlled by the net recombination rate of interstitials at the surface in the case of epitaxy and unreacted films, and by the balance between ion beam decomposition and phase formation induced by ion beam generated defects in the case of compound thin films. Recent systematic experiments on the formation of oxides and nitrides on Si, Ge/Si(100), heteroepitaxial SixGe1−x/Si(100) and GaAs(100) illustrate applications of this mechanism using IBD in the form of Ion Beam Nitridation (IBN), Ion Beam Oxidation (IBO) and Combined Ion and Molecular beam Deposition (CIMD). It is shown that these techniques enable (1) the formation of conventional phases in conditions never used before, (2) the control and creation of properties via new degrees of freedom such as ion energy and lowered substrate temperatures, and (3) the formation of new metastable heterostructures that cannot be grown by pure thermal means.

Isotopically enriched 57Fe film formation by mass separated Ion Beam Deposition Method

1994 ◽  
pp. 1165-1168
Author(s):  
Hiromasa Takahashi ◽  
Kenya Ohashi ◽  
Kiyoshi Miyake ◽  
Tetsuroh Minemura
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Deposition Method ◽  
Ion Beam Deposition ◽  
Beam Deposition

Advanced ion beam technology for versatile oxide thin film formation

2007 ◽  
Vol 7 (5) ◽  
pp. 561-573 ◽  
Author(s):  
Young-gun Han ◽  
Jung Hwan Lee ◽  
Un-Jung Yeo ◽  
Seok-Kyun Song ◽  
Jin-Wook Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Oxide Thin Film ◽  
Thin Film Formation

Optical thin film formation by gas-cluster ion beam assisted deposition

1999 ◽  
Author(s):  
H. Katsumata ◽  
J. Matsuo ◽  
T. Nishihara ◽  
T. Tachibana ◽  
K. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Ion Beam ◽  
Optical Thin Film ◽  
Ion Beam Assisted Deposition ◽  
Cluster Ion ◽  
Thin Film Formation ◽  
Gas Cluster Ion Beam

Improvement in ion beam quality for thin-film formation

2004 ◽  
Vol 188-189 ◽  
pp. 265-267 ◽  
Author(s):  
T. Sadahiro ◽  
K. Matsuyama ◽  
M. Kiuchi ◽  
T. Matumoto ◽  
T. Takizawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Beam Quality ◽  
Ion Beam ◽  
Thin Film Formation

Ion beam deposition of carbon overcoats for magnetic thin film media

2000 ◽  
Vol 36 (1) ◽  
pp. 120-124 ◽  
Author(s):  
K.J. Grannen ◽  
Xiaoding Ma ◽  
R. Thangaraj ◽  
Jing Gui ◽  
G.C. Rauch
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Magnetic Thin Film ◽  
Ion Beam Deposition ◽  
Carbon Overcoats ◽  
Beam Deposition
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