Surface photovoltage measurements and Fermi level pinning: comments on “development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds”

1982 ◽  
Vol 89 (4) ◽  
pp. L27-L33 ◽  
Author(s):  
L.J. Brillson
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Interface States ◽  
Unified Model ◽  
Surface Photovoltage ◽  
Fermi Level Pinning ◽  
Barrier Formation

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds

1982 ◽  
Vol 89 (4) ◽  
pp. 447-460 ◽  
Author(s):  
W.E. Spicer ◽  
S. Eglash ◽  
I. Lindau ◽  
C.Y. Su ◽  
P.R. Skeath
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Unified Model ◽  
Barrier Formation

Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-MoS2(0001) interface

1987 ◽  
Vol 36 (3) ◽  
pp. 1647-1656 ◽  
Author(s):  
Jeffrey R. Lince ◽  
David J. Carré ◽  
Paul D. Fleischauer
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Fermi Level Pinning ◽  
Barrier Formation

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers

1999 ◽  
Vol 86 (12) ◽  
pp. 6890-6894 ◽  
Author(s):  
M. Mamor ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander ◽  
F. D. Auret
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Fermi Level Pinning ◽  
Barrier Heights
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