Evidence of a possible correlation between the hydrogen concentration and low frequency noise in hydrogenated amorphous silicon thin films

1982 ◽  
Vol 90 (2) ◽  
pp. 171
Author(s):  
G. Cappuccio ◽  
A. D'Amico ◽  
G. Petrocco
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogen Concentration ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors

2019 ◽  
Vol 33 (02) ◽  
pp. 1950009
Author(s):  
Kai Zhong ◽  
Yuan Liu ◽  
Shu-Ting Cai ◽  
Xiao-Ming Xiong
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
Hydrogenated Amorphous

The transfer and low frequency noise characteristics of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were measured in the temperature range of 230–430 K. The variation of threshold voltage, field effect mobility and sub-threshold swing with increasing temperatures were then extracted and analyzed. Moreover, the shifts of low frequency noise in the a-Si:H TFT under various temperatures are reported for the first time. The variation of flatband voltage noise power spectral density with temperature is also calculated and discussed.

scholarly journals Low-frequency noise in hydrogenated amorphous silicon thin film transistor

2017 ◽  
Vol 66 (23) ◽  
pp. 237101
Author(s):  
Liu Yuan ◽  
He Hong-Yu ◽  
Chen Rong-Sheng ◽  
Li Bin ◽  
En Yun-Fei ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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