Low frequency noise in hydrogenated p-type amorphous silicon thin films

2017 ◽  
Vol 459 ◽  
pp. 176-183 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
C.L. Littler
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Films ◽  
P Type

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Electromigration Effect on Low Frequency Noise in Al Thin Films

1991 ◽  
Vol 30 (Part 1, No. 4) ◽  
pp. 708-710 ◽  
Author(s):  
D. M. Liou ◽  
J. Gong ◽  
C. C. Chen
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Electromigration Effect

Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

2011 ◽  
Vol 1344 ◽  
Author(s):  
M. Z. Hossain ◽  
S. L. Rumyantsev ◽  
K. M. F. Shahil ◽  
D. Teweldebrhan ◽  
M. Shur ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bulk Crystals ◽  
Noise Spectral Density ◽  
Noise Data ◽  
Device Applications ◽  
Surface Conduction

ABSTRACTWe report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.

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