Defect formation in amorphous structures as revealed by computer simulation

1984 ◽  
Vol 121 (4) ◽  
pp. 317-347 ◽  
Author(s):  
Mihai Popescu
Author(s):  
I.A. Tserna ◽  
◽  
V.V. Bukhov ◽  

The paper presents the results of computer simulation of the process of de-formationforged chain wheels, combine harvester; the influence of the placement of the jumper outline for firmware on the processes of defect formation in forging.


2003 ◽  
Vol 169-170 ◽  
pp. 215-218 ◽  
Author(s):  
Y. Kaneko ◽  
Y. Hiwatari ◽  
K. Ohara ◽  
T. Murakami

1998 ◽  
Vol 62 (5) ◽  
pp. 599-606 ◽  
Author(s):  
Feridoon Azough ◽  
Robert Freer ◽  
Kate Wright ◽  
Robert Jackson

AbstractComputer simulation techniques have been used to investigate defect formation and the diffusion of Ca and Mg in diopside. It was found that isolated, non-interacting CaO and MgO Schottky defects had the lowest formation energies (3.66 and 3.97 eV respectively); oxygen Frenkel defects are the most favourable oxygen defects (formation energies 3.93 eV). Magnesium and calcium self-diffusion in the c-direction of diopside is easiest by a vacancy mechanism involving either direct jumps along the c-direction, or double jumps in the b-c plane. In the extrinsic regime, diffusion activation energies for Mg are predicted to be 9.82 eV (direct route) and 1.97 eV (double jump route); for Ca diffusion, activation energies are predicted to be 6.62 eV (direct route) and 5.63 eV (double jump route). If additional vacancies (oxygen or magnesium) are present in the vicinity of the diffusion path, Ca migration energies fall to 1.97–2.59 eV. At elevated temperatures in the intrinsic regime, diffusion activation energies of ⩾ 5.95 eV are predicted for Mg self-diffusion and 9.29–10.28 eV for Ca self-diffusion. The values for Ca diffusion are comparable with published experimental data. It is inferred that a divacancy mechanism may operate in diopside crystals.


1981 ◽  
Vol 85 (20) ◽  
pp. 3004-3006 ◽  
Author(s):  
L. A. Bursill ◽  
L. G. Mallinson ◽  
S. R. Elliott ◽  
J. M. Thomas

1998 ◽  
Vol 540 ◽  
Author(s):  
D.J. Bacon ◽  
F. Gao ◽  
A.V. Barashev ◽  
Yu.N. Osetsky

AbstractRecent research using molecular dynamics to simulate radiation damage due to displacement cascades in metals is reviewed. It includes results dealing with the effect on defect formation of primary knock-on atom energy and irradiation temperature. Clear dependencies and trends have emerged in these areas. In terms of the development of models to describe the evolution of radiation damage microstructure, the important parameters are not only the total number of Frenkel defects but also the distribution of their population in clusters and the form and mobility of these clusters. Results on these aspects are reviewed and it is shown that computer simulation is providing detailed information that paves the way for successful development of models of the evolution of damage beyond the stage of the cascade process.


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