Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

1988 ◽  
Vol 165 (1) ◽  
pp. 21-28
Author(s):  
St. Łos̀ ◽  
St. Kochowski
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Anodic Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

2007 ◽  
Vol 91 (13) ◽  
pp. 133510 ◽  
Author(s):  
Guy Brammertz ◽  
Koen Martens ◽  
Sonja Sioncke ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Fermi Pinning in Metal-Oxide-Semiconductor Structures Results from Low Oxygen Content at the Metal-Oxide Interface

2019 ◽  
Vol 4 (1) ◽  
pp. 227-235
Author(s):  
L. R. Fonseca ◽  
A. A. Knizhnik ◽  
A. V. Gavrikov ◽  
I. M. Iskandarova ◽  
A. A. Bagatur'yants ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxygen Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Low Oxygen ◽  
Oxide Interface ◽  
Semiconductor Structures

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

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