Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves

NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, and the data are collected. By using the modified model, the measure data is fitted. Several parameters in the formula of modified model are determined to make both the measured data and the fitting data almost as close as possible. Those parameters are listed and analyzed, including kN (proportional to channel width and gate oxide capacitor, and inversely proportional to the channel length) λ (the inverse of Early Voltage), and sometimes Vth (Threshold Voltage). By kN, the appropriate process control can be high lighted, the corresponding channel concentration can be calculated and thus many implicit physical quantities may be exploited.

IMPLEMENTATION OF THE TWO-FREQUENCY METHOD FOR MEASURING THE DERIVATIVE OF CAPACITANCE-VOLTAGE CHARACTERISTIC

The article presents an example of the implementation of the two-frequency method for measuring the derivative of the capacitance-voltage characteristic. The authors describe the diagram of the measuring system and the software package for the measurement process control. The article also gives the results of measurements of the capacitance-voltage characteristic and its derivative of the silicon-based metal-insulator-semiconductor structure. The qualitative differences between the derivatives of the capacitive characteristics of the metal-insulator-semiconductor structure were obtained as a result of numerical differentiation and its direct measurement by the two-frequency method. The authors offer an explanation for this difference.

EXTRACTION STATIC PARAMETERS SPICE-MODEL OF LED ON THREE POINTS THE CURRENT-VOLTAGE CHARACTERISTIC

A simple method for extracting the static parameters of the SPICE-model of LEDs from three points of current-voltage characteristic proposes. Formulas for calculating the static parameters of the SPICE-model and measurement conditions are given.

A Driving Method for Reducing Oil Film Splitting in Electrowetting Displays

Electrowetting displays (EWDs) are one of the most potential electronic papers. However, they have the problem of oil film splitting, which could lead to a low aperture ratio of EWDs. In this paper, a driving waveform was proposed to reduce oil film splitting. The driving waveform was composed of a rising stage and a driving stage. First, the rupture voltage of oil film was analyzed by testing the voltage characteristic curve of EWDs. Then, a quadratic function waveform with an initial voltage was applied at the rising stage to suppress oil film splitting. Finally, a square wave was applied at the driving stage to maintain the aperture ratio of EWDs. The experimental results show that the luminance was increased by 8.78% and the aperture ratio was increased by 4.47% compared with an exponential function driving waveform.

Analytic theory for current-voltage characteristic of a nanowire radial p-i-n diode

In this article, process of current flow in a nanowire radial p-i-n diode has been considered in detail. It has been shown that cylindrical geometry of the structure gives rise to specific asymmetry of the concentration distribution for current carriers injected to the i-layer, which is opposite to asymmetry that is due to inequality of carriers’ mobilities. This specific asymmetry rises with bringing the i-layer nearer to the nanowire center. Together with that, decrease of the current density in a “long” p-i-n diode and its increase in a “short” p-i-n diode take place (at given forward voltage). And variation of radial thickness of the i-layer demonstrates maximums in the current density at the thickness close to the bipolar diffusion length.

Development of techniques for the formation of a planar electric vacuum diode based on an array of CNTs synthesized at the edge of the Co-Nb-N-(O) film

This work shows the possibility of forming a planar diode structure based on carbon nanotubes formed on a catalytic alloy film Co-Nb-N-(O). The paper presents a technological route for the formation of a planar diode structure Si/SiO2/Si3N4/Co-Nb-N-(O)/SiO2 and studies the emission characteristics. The current-voltage characteristic of the obtained diode structure in the Fowler-Nordheim coordinates is close to linear in the range from 15 to 22 V, which confirms the phenomenon of electron emission.

Analytical versus Metaheuristic Methods to Extract the Photovoltaic Cells and Panel Parameters

The parameters of the photovoltaic cells and panels are very important to forecast the power generated. There are a lot of methods to extract the parameters using analytical, metaheuristic, and hybrid algorithms. The comparison between the widely used analytical method and some of the best metaheuristic algorithms from the algorithm families is made for datasets from the specialized literature, using the following statistical tests: absolute error, root mean square error, and the coefficient of determination. The equivalent circuit and mathematical model considered is the single diode model. The result comparison shows that the metaheuristic algorithms have the best performance in almost all cases, and only for the genetic algorithm, there are poorer results for one chosen photovoltaic cell. The parameters of the photovoltaic cells and panels and also the current-voltage characteristic for real outdoor weather conditions are forecasted using the parameters calculated with the best method: one for analytical—the five-parameter analytical method—and one for the metaheuristic algorithms—hybrid successive discretization algorithm. Additionally, the genetic algorithm is used. The forecast current-voltage characteristic is compared with the one measured in real sunlight conditions, and the best results are obtained in the case of a hybrid successive discretization algorithm. The maximum power forecast using the calculated parameters with the five-parameter method is the best, and the error in comparison with the measured ones is 0.48%.