The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.4880399 ◽

2014 ◽

Vol 115 (20) ◽

pp. 204510 ◽

Author(s):

H. M. Przewlocki ◽

T. Gutt ◽

K. Piskorski

Keyword(s):

Metal Oxide ◽

Inflection Point ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Semiconductor Structures ◽

Capacitance Voltage

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Dependence of flat‐band voltage of metal‐oxide semiconductor structures on phosphosilicate‐glass growing conditions

Applied Physics Letters ◽

10.1063/1.91833 ◽

1980 ◽

Vol 37 (2) ◽

pp. 226-228

Author(s):

G. Masetti ◽

M. Severi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Semiconductor Structures ◽

Phosphosilicate Glass ◽

Growing Conditions

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Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Applied Physics Letters ◽

10.1063/1.4936991 ◽

2015 ◽

Vol 107 (22) ◽

pp. 223504 ◽

Author(s):

Abhitosh Vais ◽

Jacopo Franco ◽

Han-Chung Lin ◽

Nadine Collaert ◽

Anda Mocuta ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Defect Characterization ◽

Flat Band Voltage ◽

High K ◽

Capacitance Voltage ◽

Voltage Hysteresis

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Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-kGate Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l235 ◽

2005 ◽

Vol 44 (No. 7) ◽

pp. L235-L237 ◽

Author(s):

Hyundoek Yang ◽

Yunik Son ◽

Hyejung Choi ◽

Sangmoo Choi ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Voltage Sweep ◽

Capacitance Voltage

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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2790787 ◽

2007 ◽

Vol 91 (13) ◽

pp. 133510 ◽

Author(s):

Guy Brammertz ◽

Koen Martens ◽

Sonja Sioncke ◽

Annelies Delabie ◽

Matty Caymax ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo–metal–oxide–semiconductor field effect transistors by adsorption and reaction events

Journal of Applied Physics ◽

10.1063/1.3583559 ◽

2011 ◽

Vol 109 (10) ◽

pp. 104904 ◽

Author(s):

Girjesh Dubey ◽

Federico Rosei ◽

Gregory P. Lopinski

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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Quasi-static capacitance–voltage characteristics of pentacene-based metal–oxide–semiconductor structures

Microelectronics Journal ◽

10.1016/j.mejo.2013.02.017 ◽

2013 ◽

Vol 44 (7) ◽

pp. 606-611 ◽

Author(s):

C. Ucurum ◽

H. Goebel

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Static Capacitance ◽

Capacitance Voltage

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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.056 ◽

2013 ◽

Vol 109 ◽

pp. 160-162 ◽

Author(s):

Seok-Hee Lee ◽

Rino Choi ◽

Changhwan Choi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Equivalent Oxide Thickness ◽

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Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.3652699 ◽

2011 ◽

Vol 99 (16) ◽

pp. 163502 ◽

Author(s):

T. P. O’Regan ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides

Journal of Applied Physics ◽

10.1063/1.3664767 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114104 ◽

Author(s):

Kuan-Ming Chen ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage

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