High power characteristics at antiresonance frequency of piezoelectric transducers

Ultrasonics ◽  
1996 ◽  
Vol 34 (2-5) ◽  
pp. 213-217 ◽  
Author(s):  
Seiji Hirose ◽  
Manabu Aoyagi ◽  
Yoshiro Tomikawa ◽  
Sadayuki Takahashi ◽  
Kenji Uchino
1994 ◽  
Vol 360 ◽  
Author(s):  
Seiji Hirose ◽  
Sadayuki Takahashi ◽  
Kenji Uchino ◽  
Manabu Aoyagi ◽  
Yoshiro Tomikawa

AbstractTwo kinds of measuring method of the high-power characteristics of piezoelectric transducers are described. One is the measurement method at the resonance frequency and another is the measurement method at the antiresonance frequency. The vibrational velocity dependences of the equivalent circuit constants and the temperature rise were measured by using each measurement method under the constant vibrational velocity control. These results are useful for designing the ultrasonic power devices such as the ultrasonic motor, and also useful for investigating the new advanced piezoelectric materials for high power use. Especially, by using the results obtained at the antiresonance frequency, a stable state driving method, named as antiresonance driving, with high-efficiency and low-temperature rise can be achieved.


2007 ◽  
Vol 356 (1) ◽  
pp. 175-179 ◽  
Author(s):  
Shinichiro Kawada ◽  
Hirozumi Ogawa ◽  
Masahiko Kimura ◽  
Kosuke Shiratsuyu ◽  
Hideaki Niimi

1990 ◽  
Author(s):  
Hidenori Kawanishi ◽  
Hirotaka Ohno ◽  
Taiji Morimoto ◽  
Shinji Kaneiwa ◽  
Nobuyuki Miyauchi ◽  
...  

2012 ◽  
Vol 6 (4) ◽  
pp. 213 ◽  
Author(s):  
P. Davari ◽  
N. Ghasemi ◽  
F. Zare ◽  
P. O'Shea ◽  
A. Ghosh

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.


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