High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Download Full-text

High speed, low leakage current InP∕In0.53Ga0.47As∕InP metamorphic double heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:20020871 ◽

2002 ◽

Vol 38 (21) ◽

pp. 1288 ◽

Cited By ~ 7

Author(s):

Y.M. Kim ◽

M. Urteaga ◽

M.J.W. Rodwell ◽

A.C. Gossard

Keyword(s):

Leakage Current ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

Low Leakage ◽

Low Leakage Current ◽

Double Heterojunction

Download Full-text

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.1675934 ◽

2004 ◽

Vol 84 (11) ◽

pp. 1964-1966 ◽

Cited By ~ 45

Author(s):

Toshiki Makimoto ◽

Yoshiharu Yamauchi ◽

Kazuhide Kumakura

Keyword(s):

High Power ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Power Characteristics ◽

Double Heterojunction

Download Full-text

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

MRS Proceedings ◽

10.1557/proc-833-g3.7 ◽

2004 ◽

Vol 833 ◽

Author(s):

Byoung-Gue Min ◽

Jong-Min Lee ◽

Seong-Il Kim ◽

Chul-Won Ju ◽

Kyung-Ho Lee

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Oxide ◽

Surface Recombination ◽

Surface States ◽

Bipolar Transistors ◽

Base Layer ◽

Current Gain ◽

Device Structure ◽

Double Heterojunction ◽

Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

Download Full-text

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

Surface Review and Letters ◽

10.1142/s0218625x12500436 ◽

2012 ◽

Vol 19 (04) ◽

pp. 1250043

Author(s):

SHIH-WEI TAN ◽

SHIH-WEN LAI

Keyword(s):

Schottky Diode ◽

Heterojunction Bipolar Transistors ◽

Ideality Factor ◽

Equivalent Circuit Model ◽

Bipolar Transistors ◽

Base Layer ◽

Collector Current ◽

Base Current ◽

Modeling Analysis ◽

Good Agreement

Characterization and modeling analysis on both ideality factor of the collector current (η C ) and the base current (η B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn Al GaN/GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

Download Full-text

The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors

MRS Proceedings ◽

10.1557/proc-338-161 ◽

1994 ◽

Vol 338 ◽

Author(s):

F. Ren ◽

C. R. Abernathy ◽

S. N. G. Chu ◽

J. R. Lothian ◽

S. J. Pearton

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Ex Situ ◽

Base Layer ◽

Carrier Injection ◽

Collector Current ◽

Carbon Doped ◽

Dc Gain ◽

Metalorganic Molecular Beam Epitaxy ◽

Current Densities

ABSTRACTCarbon-doped base GaAs/AlGaAs HBTs display current-induced decreases in dc gain which are correlated with the amount of hydrogen incorporated in the base layer during growth by Metalorganic Molecular Beam Epitaxy (MOMBE). During device operation, minority carrier injection induced debonding of hydrogen from neutral C-H complexes leads to an increase in effective base doping level and therefore to a decrease in gain. Post-growth in-situ or ex-situ annealing eliminates this effect by breaking up the C-H complexes. Properly designed HBTs are stable even for very high collector current densities (105 A · cm−2)

Download Full-text