Spin polarized photoemission from gold using circularly polarized light

1982 ◽  
Vol 117 (1-3) ◽  
pp. A205
Author(s):  
D. Pescia ◽  
F. Meier
1994 ◽  
Vol 375 ◽  
Author(s):  
E. Tamura ◽  
G. D. Waddill ◽  
J. G. Tobin ◽  
P. A. Sterne

AbstractUsing a recently developed spin-polarized, fully relativistic, multiple scattering approach based on the layer KKR Green function method, we have reproduced the Fe 3p angle-resolved soft x-ray photoemission spectra and analyzed the associated large magnetic dichroism effects for excitation with both linearly and circularly polarized light. Comparison between theory and experiment yields a spin-orbit splitting of 1.0 – 1.2 eV and an exchange splitting of 0.9 – 1.0 eV for Fe 3p. These values are 50 – 100 % larger than those hitherto obtained experimentally.


2018 ◽  
Vol 11 (5) ◽  
pp. 053003 ◽  
Author(s):  
Nozomi Nishizawa ◽  
Masaki Aoyama ◽  
Ronel C. Roca ◽  
Kazuhiro Nishibayashi ◽  
Hiro Munekata

Science ◽  
2021 ◽  
Vol 371 (6534) ◽  
pp. 1129-1133
Author(s):  
Young-Hoon Kim ◽  
Yaxin Zhai ◽  
Haipeng Lu ◽  
Xin Pan ◽  
Chuanxiao Xiao ◽  
...  

In traditional optoelectronic approaches, control over spin, charge, and light requires the use of both electrical and magnetic fields. In a spin-polarized light-emitting diode (spin-LED), charges are injected, and circularly polarized light is emitted from spin-polarized carrier pairs. Typically, the injection of carriers occurs with the application of an electric field, whereas spin polarization can be achieved using an applied magnetic field or polarized ferromagnetic contacts. We used chiral-induced spin selectivity (CISS) to produce spin-polarized carriers and demonstrate a spin-LED that operates at room temperature without magnetic fields or ferromagnetic contacts. The CISS layer consists of oriented, self-assembled small chiral molecules within a layered organic-inorganic metal-halide hybrid semiconductor framework. The spin-LED achieves ±2.6% circularly polarized electroluminescence at room temperature.


Author(s):  
A. Hirohata ◽  
J.-Y. Kim

This chapter presents an alternative method of injecting spin-polarized electrons into a nonmagnetic semiconductor through photoexcitation. This method uses circularly-polarized light, whose energy needs to be the same as, or slightly larger than, the semiconductor band-gap, to excite spin-polarized electrons. This process will introduce a spin-polarized electron-hole pair, which can be detected as electrical signals. Such an optically induced spin-polarized current can only be generated in a direct band-gap semiconductor due to the selection rule described in the following sections. This introduction of circularly polarized light can also be used for spin-polarized scanning tunnelling microscopy.


Author(s):  
Marcos F. Maestre

Recently we have developed a form of polarization microscopy that forms images using optical properties that have previously been limited to macroscopic samples. This has given us a new window into the distribution of structure on a microscopic scale. We have coined the name differential polarization microscopy to identify the images obtained that are due to certain polarization dependent effects. Differential polarization microscopy has its origins in various spectroscopic techniques that have been used to study longer range structures in solution as well as solids. The differential scattering of circularly polarized light has been shown to be dependent on the long range chiral order, both theoretically and experimentally. The same theoretical approach was used to show that images due to differential scattering of circularly polarized light will give images dependent on chiral structures. With large helices (greater than the wavelength of light) the pitch and radius of the helix could be measured directly from these images.


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