Optical gap and Urbach edge slope in a-Se

1996 ◽  
Vol 26 (6) ◽  
pp. 279-283 ◽  
Author(s):  
L. Tichý ◽  
H. Tichá ◽  
P. Nagels ◽  
E. Sleeckx ◽  
R. Callaerts
Keyword(s):  
Optical Gap

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

Optical Properties of (Pb,Eu)Te Thin Films and Superlattices

1986 ◽  
Vol 89 ◽  
Author(s):  
W. C. Goltsos ◽  
A. V. Nurmikko ◽  
D. L. Partin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Exchange ◽  
Optical Measurements ◽  
Optical Gap ◽  
Exchange Processes ◽  
Reflectance Measurements

AbstractPhotoluminescence, transmission, and reflectance measurements have yielded information about the states defining an optical gap in thin films and superlattices based on the (Pb,Eu)Te system, including the limit of high Eu concentration. Magneto-optical measurements show the presence of finite spin exchange processes at low Eu-concentrations.

On the optical gap of amorphous silicon

1981 ◽  
Vol 45 (2) ◽  
pp. 289-292 ◽  
Author(s):  
V. Vorlíček ◽  
M. Závětová ◽  
S.K. Pavlov ◽  
L. Pajasová
Keyword(s):  
Amorphous Silicon ◽  
Optical Gap

Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H

1992 ◽  
Vol 258 ◽  
Author(s):  
Y.M. Li ◽  
I. An ◽  
M. Gunes ◽  
R.M. Dawson ◽  
R.W. Collins ◽  
...  
Keyword(s):  
Film Thickness ◽  
Real Time ◽  
Chemical Potential ◽  
Defect Density ◽  
Plasma Deposition ◽  
Plasma Cvd ◽  
Near Surface ◽  
Optical Gap ◽  
New Material ◽  
Control Samples

ABSTRACTWe have studied a-Si:H prepared by alternating plasma deposition with atomic H treatments performed with a heated W filament. Real time spectroscopie ellipsometry provides the evolution of film thickness, optical gap, and a measure of the fraction of Si-Si bonds broken in the near-surface (200 Å) during H-exposure of single films. This information guided us to the desired parameters for the H-treatments. Here, we concentrate on a weak hydrogenation regime characterized by minimal etching, a higher H content by 2 at.%, and a larger optical gap by 0.02 eV for the growth/hydrogenation structures in comparison to continuously deposited control samples. This new material has shown an improvement in the defect density in the light-soaked state in comparison to the control samples. This may result from stabilization of the Si structure due to an increase in the H chemical potential in the a-Si:H.

Structural Properties of a-Ge1-xCx:H Alloys Prepared by the RF Sputtering Technique

1997 ◽  
Vol 467 ◽  
Author(s):  
F. C. Marques ◽  
J. Vilcarromero ◽  
F. L. Freire
Keyword(s):  
Carbon Content ◽  
Rf Sputtering ◽  
Low Carbon ◽  
Infrared Transmission ◽  
Absorption Bands ◽  
Optical Gap ◽  
High Carbon Concentration ◽  
Bending Modes ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium

ABSTRACTStructural and mechanical properties of hydrogenated amorphous germanium carbon (a-Ge1-xCx:H) alloys are presented. The films were prepared by the rf-co-sputtering technique using a graphite/germanium composed target. The carbon and germanium relative concentrations were determined by RBS, and the total hydrogen concentration by ERDA measurements. An increase in the optical gap was measured for low carbon content (0 < × < 0.15). For higher values of x the optical gap is almost constant. Infrared transmission absorption spectra show several absorption bands related to Ge-C stretching, C-Hn (n = 1,2,3) and Ge-H stretching and bending modes. The mechanical internal stress was strongly affected by the incorporation of carbon. The trends of the optical gap, refractive index, infrared absorption and mechanical stress as a function of the carbon content suggest that the high carbon concentration alloys have polymeric and/or graphite-like contribution in their structure.

scholarly journals Erratum: “Determination of effective optical gap in dye/TiO2 systems inspired by p-n junctions” [Appl. Phys. Lett. 106, 143502 (2015)]

2016 ◽  
Vol 108 (1) ◽  
pp. 019901
Author(s):  
Kyung-Jun Hwang ◽  
Jongdeok An ◽  
Dajung Kim ◽  
Chan Im ◽  
Yonkil Jeong ◽  
...  
Keyword(s):  
Optical Gap
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