Numerical analysis of stress effects on Frank loop evolution during irradiation in austenitic Fe&z.sbnd;Cr&z.sbnd;Ni alloy

Author(s):  
Hiroyasu Tanigawa ◽  
Yutai Katoh ◽  
Akira Kohyama
2021 ◽  
Vol 61 (9) ◽  
pp. 2331-2339
Author(s):  
Hiroshi Fukaya ◽  
Seika Nakajima ◽  
Jonah Gamutan ◽  
Shigeru Suzuki ◽  
Koji Kajikawa ◽  
...  

Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


Sign in / Sign up

Export Citation Format

Share Document