Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy

1991 ◽  
Vol 50 (1-4) ◽  
pp. 154-158 ◽  
Author(s):  
W. Pfeiffer ◽  
M. Deicher ◽  
R. Keller ◽  
R. Magerle ◽  
P. Pross ◽  
...  
Keyword(s):  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
Pac Spectroscopy

Selected applications of perturbed angular correlation of γ-rays (PAC) spectroscopy in biochemistry

2010 ◽  
pp. 255-267
Author(s):  
Lars Hemmingsen ◽  
Monika Stachura ◽  
Peter Waaben Thulstrup ◽  
Niels Johan Christensen ◽  
Karl Johnston
Keyword(s):  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
Pac Spectroscopy ◽  
Γ Rays

Perturbed Angular Correlation Characterization of Indium Species on In/H-ZSM5 Catalysts

1999 ◽  
Vol 188 (2) ◽  
pp. 375-384 ◽  
Author(s):  
E.E. Miró ◽  
L. Gutiérrez ◽  
J.M. Ramallo López ◽  
F.G. Requejo
Keyword(s):  
Angular Correlation ◽  
Perturbed Angular Correlation

Selected applications of perturbed angular correlation of γ-rays (PAC) spectroscopy in biochemistry

2010 ◽  
Vol 197 (1-3) ◽  
pp. 255-267 ◽  
Author(s):  
Lars Hemmingsen ◽  
Monika Stachura ◽  
Peter Waaben Thulstrup ◽  
Niels Johan Christensen ◽  
Karl Johnston
Keyword(s):  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
Pac Spectroscopy ◽  
Γ Rays

Perturbed -Angular -Correlation Spectroscopy on Indium- and Cadmium- Complexes in Silicon Carbide

1994 ◽  
Vol 339 ◽  
Author(s):  
J. Meier ◽  
D. Forkel-Wirth ◽  
T. Licht ◽  
U. Reislöhner ◽  
M. Uhrmacher ◽  
...  
Keyword(s):  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
Correlation Spectroscopy ◽  
Axially Symmetric ◽  
Pac Spectroscopy ◽  
Electric Field Gradients ◽  
Cadmium Complexes ◽  
Perturbed Angular Correlation Spectroscopy ◽  
Nitrogen Doped ◽  
Field Gradients

ABSTRACTComplex formation at indium and cadmium impurities implanted into samples of 3C-, 4H-and 6H- SiC was investigated by means of Perturbed Angular Correlation (PAC)-Spectroscopy. After annealing at 1600 K up to five different configurations characterized by their specific electric field gradients (EFG(i)) were observed in 6H- SiC, only four complexes in 4H- SiC; in the 3C- modification no complex was observed. All EFG's are axially symmetric and are oriented along the c- axis of the crystal. In a highly nitrogen doped 6H- SiC epi- layer an new EFG was observed. It is tentatively assigned to a close indium- nitrogen pair.

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