SiO2 film growth by ArF laser photolysis of SiH4/N2O mixtures

1991 ◽  
Vol 51 (3-4) ◽  
pp. 171-176 ◽  
Author(s):  
Masaharu Tsuji ◽  
Minoru Sakumoto ◽  
Naoki Itoh ◽  
Hiroshi Obase ◽  
Yukio Nishimura
2000 ◽  
Vol 377-378 ◽  
pp. 518-524 ◽  
Author(s):  
S Ichimura ◽  
A Kurokawa ◽  
K Nakamura ◽  
H Itoh ◽  
H Nonaka ◽  
...  
Keyword(s):  

1982 ◽  
Vol 69 (1-2) ◽  
pp. 27-33 ◽  
Author(s):  
Takayuki Ebata ◽  
Hiroshi Yanagishita ◽  
Kinichi Obi ◽  
Ikuzo Tanaka

2000 ◽  
Vol 30 (1) ◽  
pp. 497-501 ◽  
Author(s):  
S. Ichimura ◽  
K. Koike ◽  
A. Kurokawa ◽  
K. Nakamura ◽  
H. Itoh
Keyword(s):  

1995 ◽  
Vol 388 ◽  
Author(s):  
A. A. Puretzky ◽  
D. B. Geohegan ◽  
G. E. Jellison ◽  
M. M. Mcgibbon

AbstractA comparative study of arF- and KrF-laser deposition of amorphous diamond-like carbon (DLC) films and relevant carbon plasmas has been performed. Spectroscopic ellipsometry and EELS analysis of the DLC films deposited on Si <100> and NaCl substrates were utilized to characterize the high quality arF- and KrF-laser deposited films (up to 84% of sp3 bonded carbon in 7 J/cm2 -ArF-laser DLC film). Gated ICCD imaging, luminescence and ion current probe diagnostics of the carbon plume have revealed quite different properties of carbon plasmas generated by arF- and KrF- lasers. KrF-laser (6.7 J/cm2) irradiation produces a less energetic carbon plasma containing larger amounts of C2 and probably larger clusters compared with arF-laser irradiation at the same energy fluence. We conclude that the more energetic and highly-atomized arF-laser carbon plasma results in the better diamond-like properties.


1985 ◽  
Vol 82 (12) ◽  
pp. 5519-5526 ◽  
Author(s):  
A. Hofzumahaus ◽  
F. Stuhl
Keyword(s):  

1980 ◽  
Vol 73 (3) ◽  
pp. 478-482 ◽  
Author(s):  
M.J. Shaw ◽  
M.C. Gower ◽  
S. Rolt

1988 ◽  
Vol 33-34 ◽  
pp. 427-433 ◽  
Author(s):  
Masanori Okuyama ◽  
Noriaki Fujiki ◽  
Kouji Inoue ◽  
Yoshihiro Hamakawa

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