In-situ and multilayer laser ablation deposition of Pb2Sr2Y0.5Ca0.5Cu3O8+δ thin films

1992 ◽  
Vol 54 ◽  
pp. 166-170 ◽  
Author(s):  
S.H.H. Naqvi ◽  
F. Beech ◽  
I.W. Boyd
Keyword(s):  
1995 ◽  
Vol 254 (1-2) ◽  
pp. 139-146 ◽  
Author(s):  
E. Matthias ◽  
J. Siegel ◽  
S. Petzoldt ◽  
M. Reichling ◽  
H. Skurk ◽  
...  

1992 ◽  
Vol 196 (3-4) ◽  
pp. 264-270 ◽  
Author(s):  
R. Pinto ◽  
S.P. Pai ◽  
C.P. D'Souza ◽  
L.C. Gupta ◽  
R. Vijayaraghavan ◽  
...  

2001 ◽  
Vol 3 (3) ◽  
pp. 111-121 ◽  
Author(s):  
Aldo Mele ◽  
Anna Giardini ◽  
Tonia M. Di Palma ◽  
Chiara Flamini ◽  
Hideo Okabe ◽  
...  

The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitride deposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometry have been applied forin situidentification of deposition precursors in the plume moving from the target. Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanning electron microscopy, have been used to characterise thin films deposited by these methods.


1989 ◽  
Vol 162-164 ◽  
pp. 125-126 ◽  
Author(s):  
D.H.A. Blank ◽  
D.J. Adelerhof ◽  
J. Flokstra ◽  
H. Rogalla

1993 ◽  
Vol 18 (2) ◽  
pp. 115-121 ◽  
Author(s):  
M. Guilloux-Viry ◽  
C. Thivet ◽  
M.G. Karkut ◽  
J. Padiou ◽  
O. Peña ◽  
...  

1993 ◽  
Vol 132 (3-4) ◽  
pp. 396-404 ◽  
Author(s):  
M. Guilloux-Viry ◽  
C. Thivet ◽  
A. Perrin ◽  
M. Sergent ◽  
M.G. Karkut ◽  
...  

1994 ◽  
Vol 231 (3-4) ◽  
pp. 335-340 ◽  
Author(s):  
M. Badaye ◽  
Y. Kanke ◽  
K. Fukushima ◽  
T. Morishita

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