Very high strain sensitivity in thick-film resistors: real and false super gauge factors

1989 ◽  
Vol 19 (4) ◽  
pp. 401-414 ◽  
Author(s):  
M. Prudenziati ◽  
B. Morten ◽  
F. Cilloni ◽  
G. Ruffi
2017 ◽  
Author(s):  
G. Testa ◽  
N. Bonora ◽  
A. Ruggiero ◽  
G. Iannitti ◽  
I. Persechino ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 24 (23) ◽  
pp. no-no
Author(s):  
K. HIGASHI ◽  
T. MUKAI ◽  
S. TANIMURA ◽  
A. INOUE ◽  
T. MASUMOTO ◽  
...  

1970 ◽  
Vol 10 (9) ◽  
pp. 370-376 ◽  
Author(s):  
C. K. H. Dharan ◽  
F. E. Hauser

2003 ◽  
Vol 16 (2) ◽  
pp. S39-S47 ◽  
Author(s):  
P Puech ◽  
F Demangeot ◽  
Paulo Sergio Pizani ◽  
V Domnich ◽  
Y Gogotsi

Author(s):  
R. Seddik ◽  
A. Rondepierre ◽  
S. Prabhakaran ◽  
L. Morin ◽  
V. Favier ◽  
...  

Author(s):  
Eldar Mehraly Gojayev ◽  
Gulshan Nuraddin Mammadova

In this work, single crystals of TlIn[Formula: see text]Ga[Formula: see text]Se2 solid solutions were grown by the methods of zone recrystallization, technologies for the manufacture of strain gauges based on them were developed and the tensoresistive properties of these phases were studied, the coefficient of strain sensitivity was determined by the static method depending on the temperature, the magnitude of mechanical deformation and optical illumination. Revealing that the single crystals have a high strain sensitivity coefficient, by the variation of the composition, quantity of mechanical deformation and the optical illumination, it is possible to control the phase coefficients investigated tensosensitivity.


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