Corrosion resistance of plasma-assisted chemical vapour deposition (PACVD) TiN-coated steel in a range of aggressive environments

1996 ◽  
Vol 85 (3) ◽  
pp. 125-130 ◽  
Author(s):  
Ellina Lunarska ◽  
N. Ageeva ◽  
J. Michalski
Keyword(s):  
Corrosion Resistance ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Coated Steel

Anticorrosion behaviour of amorphous silicon-based coatings prepared by remote cold plasma-assisted chemical vapour deposition process

2018 ◽  
pp. 23-31
Author(s):  
A. Delimi
Keyword(s):  
Corrosion Resistance ◽  
Carbon Steel ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Electrochemical Impedance ◽  
Electrochemical Behaviour ◽  
Chemical Vapour ◽  
Steel Specimen ◽  
Nitrogen Plasma ◽  
Pre Treatment

Organosilicon films were deposited on carbon steel samples using remote microwave nitrogen plasma-assisted chemical vapour deposition. The deposits were obtained using TetraMethyDisoloxane monomer mixed with oxygen. The formed films were characterised using electron microprobe analysis, Fourier transformed infrared spectroscopy, contact angle measurements, scanning electron microscopy and atomic force microscopy. The electrochemical properties of the organosilicon coatings were evaluated using gravimetric experiments next to electrochemical tests. A significant increase in the corrosion resistance behaviour of the organosilicon coated carbon steel specimen was found when the samples were immersed in 3% aqueous sodium chloride solutions. Also, the surface pre-treatment process of carbon steel had an important influence on the morphological and electrochemical behaviour. Argon pre-treatment improves significantly the corrosion resistance or organosilicon coated steel samples. Gravimetric tests in particular showed that samples pre-treated with argon result in lower weight loss and decreased corrosion rates compared to interfaces pre-treated with nitrogen plasma. Keywords: PACVD, carbon steel, organ silicon, corrosion, pre-treatment, electrochemical impedance spectroscopy.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

Sign in / Sign up

Export Citation Format

Share Document