Monte Carlo track structure studies of energy deposition and calculation of initial DSB and RBE

1994 ◽  
Vol 14 (10) ◽  
pp. 161-180 ◽  
Author(s):  
H. Nikjoo ◽  
D.E. Charlton ◽  
D.T. Goodhead
1994 ◽  
Vol 52 (1-4) ◽  
pp. 165-169 ◽  
Author(s):  
H. Nikjoo ◽  
M. Terrissol ◽  
R.N. Hamm ◽  
J.E. Turner ◽  
S. Uehara ◽  
...  

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.


2014 ◽  
Vol 668-669 ◽  
pp. 1011-1014
Author(s):  
Yang Liu ◽  
Guo Zheng Zhu ◽  
Zhen Ni Xing

Gallium nitride (GaN) is the third generation of semiconductor material; it has a large band gap, high thermal conductivity, low dielectric constant, high drift speed, etc. Radiation detectors based on GaN material have small volume, high radiation resistance, and fast response, can be used to replace the existing Large Hadron Collider vertex detector and track detector. Energy deposition characteristic of GaN detectors to radiation beam is an important factor for detection efficiency, and there are many factors that affect the energy deposition characteristics of the detector, like the detection mechanism, the impact of material properties, the type of incident ray, radiation energy, and many other factors. This paper studies the physical properties of GaN detector by calculation based on Monte Carlo simulation. Energy deposition characteristics are discussed respectively for incident γ-ray with different energy, in the front-end and back-end add PTFE material. The results of our study present the theoretical properties of GaN radiation detectors.


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