Etch pit formation by photoelectrochemical etching in II–VI Semiconductor compounds

1986 ◽  
Vol 19 (4) ◽  
pp. 393
Author(s):  
Victor Marcu ◽  
Reshef Tenne
1999 ◽  
Vol 5 (1) ◽  
pp. 39-42 ◽  
Author(s):  
Chongmu Lee
Keyword(s):  
Etch Pit ◽  

2012 ◽  
Vol 209 (9) ◽  
pp. 1715-1720 ◽  
Author(s):  
M. Naamoun ◽  
A. Tallaire ◽  
F. Silva ◽  
J. Achard ◽  
P. Doppelt ◽  
...  

1973 ◽  
Vol 12 (10) ◽  
pp. 1647-1648 ◽  
Author(s):  
Hironobu Nishikawa

2007 ◽  
Vol 124-126 ◽  
pp. 1561-1564
Author(s):  
Jae Kwang Lee ◽  
Yun Ho Shin ◽  
Jin Wook Kang ◽  
Yong Sug Tak

The effect of chemical pretreatments on the electrochemical etching behavior of aluminum was investigated with the topographic studies of surface and the analysis of initial potential transients. Two-step pretreatments with H3PO4 and H2SiF6 result in a high density of pre-etch pits on aluminum surface by the incorporation of phosphate ion inside the oxide film and the removal of surface layer by aggressive fluorosilicic acid solution. It generates a high density of etch pits during electrochemical etching and results in the capacitance increase of etched Al electrode by expanding the surface area, up to 61.3 μF/cm2 with the pretreatment solution of 0.5M H3PO4 at 65°C and 10 mM H2SiF6 at 45°C.


2009 ◽  
Vol 51 (7) ◽  
pp. 1501-1505 ◽  
Author(s):  
Jaekwang Lee ◽  
Jiyoung Kim ◽  
Jutae Kim ◽  
Junhee Lee ◽  
Hwayong Chung ◽  
...  
Keyword(s):  
Etch Pit ◽  

1957 ◽  
Vol 28 (12) ◽  
pp. 1419-1423 ◽  
Author(s):  
R. A. Logan ◽  
A. J. Peters

2008 ◽  
Vol 72 (1) ◽  
pp. 115-120 ◽  
Author(s):  
T. J. McMaster ◽  
M. M. Smits ◽  
S. J. Haward ◽  
J. R. Leake ◽  
S. Banwart ◽  
...  

AbstractWe have used a direct imaging technique, in situ atomic force microscopy(AFM) to observe the earliest stages of the dissolution of a biotite surface byoxalic acid at temperatures close to ambient conditions, using a speciallydesigned AFM liquid cell and non-invasive intermittent contact mode of operation. From the nm-resolution data sets in x, yand z dimensions, we have measured dissolution rates and determined activation energies for the process as a function of temperature, via a mass-loss calculation. The value of Ea obtained, 49±2 kJ mol-1, appears to be too high to indicate a diffusion-controlled process and is more in line with expectations based on a process limited by the rate of ligand-induced metal cation detachment from the (001) surface. This is consistent with visual observations of the relative rates of etch-pit formation and growth, and accepted knowledge of the biotite crystal structure. Separate calculations based on planar area etch-pit growth, and measurements of etch-pit perimeters confirm this result, and also indicate substantiallyhigher activation energy, up to 80 kJ mol-1, when the edge pits are in an incipient stage.


2008 ◽  
Vol 47 (1) ◽  
pp. 269-272 ◽  
Author(s):  
Fuminobu Sato ◽  
Takahiro Kuchimaru ◽  
Yushi Kato ◽  
Toshiyuki Iida

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