Conduction band-edge charge densities in II–VI compound semiconductors

1990 ◽  
Vol 145 (8-9) ◽  
pp. 455-460 ◽  
Author(s):  
H. Aourag ◽  
B. Khelifa ◽  
L. Hamerlaine ◽  
H. Belarbi ◽  
A. Belaidi
Keyword(s):  
Conduction Band ◽  
Compound Semiconductors ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Charge Densities

Conduction Band Edge Charge Densities in HgxCd1−xTe

1992 ◽  
Vol 169 (2) ◽  
pp. 379-386
Author(s):  
H. Aourag ◽  
B. Khelifa ◽  
M. Rezki ◽  
A. Tadjer
Keyword(s):  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Charge Densities

Conduction Band Edge Charge Densities in InxGa1−xSb

1995 ◽  
Vol 190 (1) ◽  
pp. 227-239 ◽  
Author(s):  
N. Bouarissa ◽  
H. Aourag
Keyword(s):  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Charge Densities

Valence and conduction band-edge charge densities in GaxIn1−xAs

1992 ◽  
Vol 30 (3) ◽  
pp. 187-193
Author(s):  
G. Merad ◽  
H. Aourag ◽  
B. Khelifa
Keyword(s):  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Charge Densities

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5888-5902 ◽  
Author(s):  
Jacek Jasieniak ◽  
Marco Califano ◽  
Scott E. Watkins
Keyword(s):  
Conduction Band ◽  
Semiconductor Nanocrystals ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Size Dependent
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