Optimization of the junction depth and doping of solar cell emitters

Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of unoptimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated.

Download Full-text

Numerical analysis of junction‐depth effect in the grating‐type Si solar cell

Journal of Applied Physics ◽

10.1063/1.329636 ◽

1981 ◽

Vol 52 (3) ◽

pp. 1548-1551

Author(s):

H. L. Hwang ◽

D. C. Liu ◽

J. E. Lin ◽

J. J. Loferski

Keyword(s):

Solar Cell ◽

Numerical Analysis ◽

Junction Depth ◽

Depth Effect ◽

Si Solar Cell

Download Full-text

Ebic/Tem Investigation of Defects in Solar Cell Silicon

MRS Proceedings ◽

10.1557/proc-5-167 ◽

1981 ◽

Vol 5 ◽

Cited By ~ 3

Author(s):

Dieter G. Ast ◽

Brian Cunningham ◽

Horst Strunk

Keyword(s):

Solar Cell ◽

Chemical Composition ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Dislocation Network ◽

Junction Depth ◽

First Order ◽

Chemical Impurities ◽

Crystal Volume

ABSTRACTTwo examples are given of the application of EBIC and HVTEM to the study of defects in silicon.An hexagonal dislocation network in a coherent first order twin boundary in WEB silicon shows a three fold symmetry when imaged by EBIC. The observed variation of the minority carrier lifetime at the nodes is consistent with a model which assumes that jogs are particularly strong recombination sites at a dislocation.EBIC and STEM observations on unprocessed and processed EFG ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found i) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and ii) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

Download Full-text

Effect of junction depth on the performance of a diffused n+p silicon solar cell

Solid-State Electronics ◽

10.1016/0038-1101(81)90172-6 ◽

1981 ◽

Vol 24 (12) ◽

pp. 1077-1080 ◽

Cited By ~ 6

Author(s):

P. Caleb Dhanasekaran ◽

B.S.V. Gopalam

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Junction Depth

Download Full-text

Research of a New Type of Solar Cell Materials

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.488-489.44 ◽

2014 ◽

Vol 488-489 ◽

pp. 44-47

Author(s):

Hao Hua Li ◽

You Hua Wang ◽

Dun Yu Zhu

Keyword(s):

Solar Cell ◽

Conversion Efficiency ◽

Short Circuit ◽

Monocrystalline Silicon ◽

Maximum Efficiency ◽

Photoelectric Conversion Efficiency ◽

Junction Depth ◽

Photoelectric Conversion ◽

Crystal Silicon ◽

Solar Battery

Solar energy is the inexhaustible,enewable Energy. The solar cell is the solar light energy into electricity. The unique advantages of solar cell. Potential, more than wind, hydro, geothermal energy, nuclear energy and other resources, is expected to become the main pillar of power supply in the future. This paper studies that the main parameters of monocrystalline crystal silicon solar battery: the junction depth and superficial concentrations influence on electrical characteristics of monocrystalline silicon solar battery. The result shows that for maximum efficiency, it is bound to get the largest possible open circuit voltage, short circuit current and fill factor of the product, therefore, it is necessary to control these two parameters, the junction depth and doping parameters. If the junction depth is constant, with the increased superficial doping concentration of monocrystalline silicon solar battery, the photoelectric conversion efficiency of the battery increases slowly at first and then rapidly decreases, and the deeper the junction depth is, the more obvious trend of the photoelectric conversion efficiency is.

Download Full-text