High-field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures

1993 ◽  
Vol 184 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
M. van der Burgt ◽  
A. Van Esch ◽  
F.M. Peeters ◽  
M. Van Hove ◽  
G. Borghs ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
High Carrier

Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 619-622
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Ling Zhu ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Voltage ◽  
High Carrier

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

scholarly journals Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP

2019 ◽  
Vol 99 (12) ◽  
Author(s):  
Q. Niu ◽  
W. C. Yu ◽  
E. I. Paredes Aulestia ◽  
Y. J. Hu ◽  
Kwing To Lai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Carrier

Interface recombination of Cu 2 ZnSnS 4 solar cells leveraged by high carrier density and interface defects

Solar RRL ◽  
2021 ◽  
Author(s):  
Jianjun Li ◽  
Jialiang Huang ◽  
Yanchan Huang ◽  
Hitoshi Tampo ◽  
Takeaki Sakurai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Density ◽  
Interface Recombination ◽  
Interface Defects ◽  
High Carrier

Field Effect Mobility of F16PcCu Films in Various Gas Atmospheres

1999 ◽  
Vol 03 (07) ◽  
pp. 667-671 ◽  
Author(s):  
HIROKAZU TADA ◽  
HIROSHI TOUDA ◽  
MASAKI TAKADA ◽  
KAZUMI MATSUSHIGE
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Room Temperature ◽  
Gas Adsorption ◽  
Quick Recovery ◽  
Thermally Activated ◽  
High Carrier ◽  
Gas Molecules

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.

High-Carrier-Density Pump-Probe Measurements of Low-Temperature Grown GaAs

1997 ◽  
Author(s):  
T. S. Sosnowski ◽  
T. B. Norris ◽  
H. H. Wang ◽  
P. Grenier ◽  
J. F. Whitaker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Density ◽  
Pump Probe ◽  
High Carrier ◽  
Probe Measurements ◽  
Low Temperature Grown Gaas

High carrier density CeO2 dielectrics—implications for MOS devices

2004 ◽  
Vol 24 (6) ◽  
pp. 1459-1462 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Darja Kek ◽  
Harry L. Tuller
Keyword(s):  
Carrier Density ◽  
Mos Devices ◽  
High Carrier
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