High-Carrier-Density Pump-Probe Measurements of Low-Temperature Grown GaAs

1997 ◽  
Author(s):  
T. S. Sosnowski ◽  
T. B. Norris ◽  
H. H. Wang ◽  
P. Grenier ◽  
J. F. Whitaker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Density ◽  
Pump Probe ◽  
High Carrier ◽  
Probe Measurements ◽  
Low Temperature Grown Gaas

High-carrier-density electron dynamics in low-temperature-grown GaAs

1997 ◽  
Vol 70 (24) ◽  
pp. 3245-3247 ◽  
Author(s):  
T. S. Sosnowski ◽  
T. B. Norris ◽  
H. H. Wang ◽  
P. Grenier ◽  
J. F. Whitaker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Density ◽  
Electron Dynamics ◽  
High Carrier ◽  
Low Temperature Grown Gaas

Pump-Probe Measurements Using Silicon Nanocrystal Waveguides

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman
Keyword(s):  
Probe Beam ◽  
Time Resolution ◽  
Pump Beam ◽  
Silicon Nanocrystals ◽  
Continuous Wave ◽  
Optical Gain ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Measurements

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.

scholarly journals Giant Photoluminescence Enhancement and Carrier Dynamics in MoS2 Bilayers with Anomalous Interlayer Coupling

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1994
Author(s):  
Han Li ◽  
Yating Ma ◽  
Zhongjie Xu ◽  
Xiang’ai Cheng ◽  
Tian Jiang
Keyword(s):  
Optical Properties ◽  
Transition Metal Dichalcogenides ◽  
Interlayer Coupling ◽  
Carrier Dynamics ◽  
Probe Signal ◽  
Exciton Resonance ◽  
Pump Probe ◽  
Metal Dichalcogenides ◽  
Photoluminescence Enhancement ◽  
Probe Measurements

Fundamental researches and explorations based on transition metal dichalcogenides (TMDCs) mainly focus on their monolayer counterparts, where optical densities are limited owing to the atomic monolayer thickness. Photoluminescence (PL) yield in bilayer TMDCs is much suppressed owing to indirect-bandgap properties. Here, optical properties are explored in artificially twisted bilayers of molybdenum disulfide (MoS2). Anomalous interlayer coupling and resultant giant PL enhancement are firstly observed in MoS2 bilayers, related to the suspension of the top layer material and independent of twisted angle. Moreover, carrier dynamics in MoS2 bilayers with anomalous interlayer coupling are revealed with pump-probe measurements, and the secondary rising behavior in pump-probe signal of B-exciton resonance, originating from valley depolarization of A-exciton, is firstly reported and discussed in this work. These results lay the groundwork for future advancement and applications beyond TMDCs monolayers.

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