Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 619-622
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Ling Zhu ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Voltage ◽  
High Carrier

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 602-605
Author(s):  
Li Zheng ◽  
Hong Liu
Keyword(s):  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Filaments ◽  
The Impact ◽  
Photo Ionization

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

High-field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures

1993 ◽  
Vol 184 (1-4) ◽  
pp. 211-215 ◽  
Author(s):  
M. van der Burgt ◽  
A. Van Esch ◽  
F.M. Peeters ◽  
M. Van Hove ◽  
G. Borghs ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
High Carrier

Carrier generation in high gain GaAs photoconductive semiconductor switches

2015 ◽  
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiaoling Zhu ◽  
Yuting Yang ◽  
...  
Keyword(s):  
High Gain ◽  
Carrier Generation ◽  
Semiconductor Switches

Photoionization in GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 631-634
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Qian Wang ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
Dominant Role ◽  
High Gain ◽  
Average Density ◽  
Maximum Density ◽  
Distribution Characteristics ◽  
Key Factors ◽  
Current Filament ◽  
Semiconductor Switches ◽  
Current Filaments

The density distribution characteristics of non-equilibrium carrier from spontaneous emission ahead of the tip of the current filaments in high gain semi-insulating GaAs photoconductive semiconductor switches are analyzed. The results show that the ratio of volume to area of the current filament and the average carrier density in the current filaments are two key factors that affect the photoionization effects of the current filaments. The reabsorption of wavelengths λ ≤ 876 nm radiations plays a dominant role in producing the maximum carrier density. The maximum density of photo-generated carrier is approximately 1~3 orders of magnitude lower than the average density of excess carrier inside the current filaments.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

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