BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects
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2016 ◽
Vol 6
(2)
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pp. Q3067-Q3070
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1997 ◽
Vol 50
(1-3)
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pp. 174-179
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2012 ◽
Vol 6
(9-10)
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pp. 359-369
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