Electron-phonon scattering time in crystalline disordered Ti1−xAlx alloys

1996 ◽  
Vol 219-220 ◽  
pp. 68-70 ◽  
Author(s):  
J.J. Lin ◽  
C.Y. Wu
Keyword(s):  
Phonon Scattering ◽  
Scattering Time ◽  
Electron Phonon Scattering

Temperature dependence of the electron–phonon scattering time of charge carriers inp-Si/SiGe heterojunctions

2000 ◽  
Vol 26 (12) ◽  
pp. 890-893 ◽  
Author(s):  
V. V. Andrievskiı̆ ◽  
I. B. Berkutov ◽  
Yu. F. Komnik ◽  
O. A. Mironov ◽  
T. E. Whall
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
Charge Carriers ◽  
Scattering Time ◽  
Electron Phonon Scattering

SCATTERING TIME ENGINEERING IN QUANTUM-BASED ELECTRONIC DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 125-144
Author(s):  
JEAN-PIERRE LEBURTON
Keyword(s):  
Quantum Dot ◽  
Phonon Scattering ◽  
Quantum Wires ◽  
Differential Resistance ◽  
One Dimensional ◽  
Linear Chains ◽  
Low Dimensionality ◽  
Scattering Time ◽  
Hopping Conductance ◽  
Electron Phonon Scattering

The interplay between geometrical confinement and materials considerations can efficiently reduce phonon-assisted transport, enabling scattering time and dissipation engineering in quantum devices. In resonant tunneling (RT) structures, quenching of phonon-assisted transmission leading to considerable reduction of the off-resonance valley-current is shown to occur in interband devices. In structures of low dimensionality such as quantum wires, electron-phonon scattering exhibits size effects and intersubband resonances which modulates the drift velocity and conductance of one-dimensional systems. Quantum dot nanostructures offer large flexibility for reduction and modulation of dissipative processes such as oscillatory hopping conductance induced by acoustic phonons in linear chains of quantum dots or negative differential resistance curve shaping in RT through quantum dot arrays.

Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

2015 ◽  
Vol 14 (02) ◽  
pp. 1550018 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Thermal Noise ◽  
Phonon Scattering ◽  
Phonon Modes ◽  
Equilibrium Conditions ◽  
Noise Component ◽  
Intermittent Behavior ◽  
The Mean ◽  
Scattering Time ◽  
Off Time ◽  
Electron Phonon Scattering

We regard a metallic resistor for temperatures T ≫ Θ D (= Debye temperature); under this condition, electron–phonon scattering is the dominant scattering mechanism. We investigate the noise properties under the supposition that phonon scattering is an intermittent process. Intermissions may be caused by an interaction between different phonon modes giving rise to a short break down of a mode. Due to such an intermittent behavior, we obtain — besides thermal noise — a 1/f noise component. Under equilibrium conditions, the 1/f noise term disappears. Under an applied electric field, the electrons are accelerated between collisions resulting in an additional 1/f noise component which can be compared with Hooge's relation. The predicted Hooge coefficient is α ≈ 3 ⋅ 10-3(τ off /τs)2 with τs being the mean electron phonon scattering time and τ off being the mean off-time ( = intermission). We also find 1/f fluctuations in the square of thermal noise suggesting that an applied current only probes 1/f fluctuations which are already present under equilibrium conditions.

Ab initiocalculation of electron-phonon scattering time in germanium

2011 ◽  
Vol 84 (3) ◽  
Author(s):  
V. G. Tyuterev ◽  
S. V. Obukhov ◽  
N. Vast ◽  
J. Sjakste
Keyword(s):  
Phonon Scattering ◽  
Scattering Time ◽  
Electron Phonon Scattering

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

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