Temperature dependence of the electron–phonon scattering time of charge carriers inp-Si/SiGe heterojunctions

2000 ◽  
Vol 26 (12) ◽  
pp. 890-893 ◽  
Author(s):  
V. V. Andrievskiı̆ ◽  
I. B. Berkutov ◽  
Yu. F. Komnik ◽  
O. A. Mironov ◽  
T. E. Whall
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
Charge Carriers ◽  
Scattering Time ◽  
Electron Phonon Scattering

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Power Law ◽  
Phonon Scattering ◽  
Recombination Process ◽  
Semiconductor Materials ◽  
Conduction Electrons ◽  
Fluorescence Intermittency ◽  
The Impact ◽  
Electron Phonon Scattering

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

Explanation of the temperature dependence of resistivity in high-Tc superconducting Ba0.6K0.4BiO3 by electron-phonon scattering

1994 ◽  
Vol 231 (3-4) ◽  
pp. 319-324 ◽  
Author(s):  
A.I. Golovashkin ◽  
A.V. Gudenko ◽  
A.M. Tskhovrebov ◽  
L.N. Zherikhina ◽  
M.L. Norton
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
High Tc ◽  
Electron Phonon Scattering

Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5034-5037 ◽  
Author(s):  
Masaru Kamano ◽  
Masanobu Haraguchi ◽  
Takahiro Niwaki ◽  
Masuo Fukui ◽  
Minoru Kuwahara ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Temperature Dependence ◽  
Phonon Scattering ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Scattering Time

The explanation of temperature dependence of resistivity in high-Tc superconducting Ba0.6K0.4BiO3 by electron-phonon scattering

1994 ◽  
Vol 235-240 ◽  
pp. 1481-1482 ◽  
Author(s):  
A.I. Golovashkin ◽  
A.V. Gudenko ◽  
A.M. Tskhovrebov ◽  
L.N. Zherikhina ◽  
M.L. Norton
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
High Tc ◽  
Electron Phonon Scattering

Amplitude of the de Haas—van Alphen effect in mercury

1972 ◽  
Vol 329 (1576) ◽  
pp. 17-34 ◽  
Keyword(s):  
Temperature Dependence ◽  
Debye Temperature ◽  
Phonon Scattering ◽  
Many Body ◽  
Temperature Dependent ◽  
Many Body Theory ◽  
Logarithmic Plot ◽  
Paradoxical Result ◽  
Body Theory ◽  
Electron Phonon Scattering

The amplitude of the de Haas-van Alphen oscillations in mercury has been studied at temperatures between 1 and 17 K and fields between 20 and 90 T. Because of the low Debye temperature of mercury, the Dingle temperature X might be expected to increase appreciably with temperature because of increased scattering of electrons by phonons. Such a temperature dependent X would also cause the appropriate logarithmic plot of amplitude against temperature to depart appreciably from linearity. Measurements of X as a function of temperature and of the temperature dependence of amplitude at a number of fields have however provided no evidence of any appreciable temperature dependence of X . This apparently paradoxical result turns out to be explicable by a recent many-body theory due to Engelsberg & Simpson of the effects of electron-phonon scattering on the de Haas-van Alphen amplitude.

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