Intermittent Phonon Scattering as a Possible Origin of 1/f Fluctuations in Metallic Resistors

2015 ◽  
Vol 14 (02) ◽  
pp. 1550018 ◽  
Author(s):  
Ferdinand Grüneis

We regard a metallic resistor for temperatures T ≫ Θ D (= Debye temperature); under this condition, electron–phonon scattering is the dominant scattering mechanism. We investigate the noise properties under the supposition that phonon scattering is an intermittent process. Intermissions may be caused by an interaction between different phonon modes giving rise to a short break down of a mode. Due to such an intermittent behavior, we obtain — besides thermal noise — a 1/f noise component. Under equilibrium conditions, the 1/f noise term disappears. Under an applied electric field, the electrons are accelerated between collisions resulting in an additional 1/f noise component which can be compared with Hooge's relation. The predicted Hooge coefficient is α ≈ 3 ⋅ 10-3(τ off /τs)2 with τs being the mean electron phonon scattering time and τ off being the mean off-time ( = intermission). We also find 1/f fluctuations in the square of thermal noise suggesting that an applied current only probes 1/f fluctuations which are already present under equilibrium conditions.

1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.


2011 ◽  
Vol 284-286 ◽  
pp. 871-874
Author(s):  
Zan Wang ◽  
Lei Quan ◽  
Yi Wu Ruan

A Monte Carlo method is employed to investigate the properties of electron transport with considerations of electron-phonon scattering including intervalley scattering and intravalley scattering. Under different electric fields, the coupling relations between electrons and phonons are studied, and the behaviors of absorbing and releasing phonons from electrons are also analyzed. The results show the scattering events of absorbing phonons from electrons decrease with the increasing simulation time. At the same temperature, the mean free path of electron increases initially and then decreases with the increasing electric field intensity, and finally approaches an asymptotic value.


2000 ◽  
Vol 26 (12) ◽  
pp. 890-893 ◽  
Author(s):  
V. V. Andrievskiı̆ ◽  
I. B. Berkutov ◽  
Yu. F. Komnik ◽  
O. A. Mironov ◽  
T. E. Whall

1998 ◽  
Vol 09 (01) ◽  
pp. 125-144
Author(s):  
JEAN-PIERRE LEBURTON

The interplay between geometrical confinement and materials considerations can efficiently reduce phonon-assisted transport, enabling scattering time and dissipation engineering in quantum devices. In resonant tunneling (RT) structures, quenching of phonon-assisted transmission leading to considerable reduction of the off-resonance valley-current is shown to occur in interband devices. In structures of low dimensionality such as quantum wires, electron-phonon scattering exhibits size effects and intersubband resonances which modulates the drift velocity and conductance of one-dimensional systems. Quantum dot nanostructures offer large flexibility for reduction and modulation of dissipative processes such as oscillatory hopping conductance induced by acoustic phonons in linear chains of quantum dots or negative differential resistance curve shaping in RT through quantum dot arrays.


2011 ◽  
Vol 84 (3) ◽  
Author(s):  
V. G. Tyuterev ◽  
S. V. Obukhov ◽  
N. Vast ◽  
J. Sjakste

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