TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Temperature Dependence of the Electrical Resistivity in Nanocrystalline Gold Films Made by Advanced GaS Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
J. Ederth ◽  
L. B. Kiss ◽  
G. A. Niklasson ◽  
C. G. Granqvist ◽  
E. Olsson
Keyword(s):  
Grain Size ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Atmospheric Pressure ◽  
Nanocrystalline Materials ◽  
Phonon Scattering ◽  
Sudden Change ◽  
Gold Films ◽  
Temperature Coefficient Of Resistivity ◽  
Electron Phonon Scattering

ABSTRACTNanocrystalline thin Au films with grain size 10 - 76 nm have been analyzed regarding the temperature dependence of the electrical resistivity. A sudden change in the power function, ρ α Tn, was found at ∼10 K, where n = 1.7 in the range 5 - 10 K and n = 3.3 in the range 10 - 15 K. This effect disappears after annealing at 773 K for 0.5 h in air at atmospheric pressure. After the annealing the grain size was ∼ 100 nm. This is an indication of interference between electron-phonon scattering and electron-grain boundary scattering in nanocrystalline materials at low temperatures.The temperature coefficient of resistivity, TCR, increased with increasing grain size at any temperature and the position of the maximum TCR was shifted towards lower temperatures with increasing grain size.

An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Power Law ◽  
Phonon Scattering ◽  
Recombination Process ◽  
Semiconductor Materials ◽  
Conduction Electrons ◽  
Fluorescence Intermittency ◽  
The Impact ◽  
Electron Phonon Scattering

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

Explanation of the temperature dependence of resistivity in high-Tc superconducting Ba0.6K0.4BiO3 by electron-phonon scattering

1994 ◽  
Vol 231 (3-4) ◽  
pp. 319-324 ◽  
Author(s):  
A.I. Golovashkin ◽  
A.V. Gudenko ◽  
A.M. Tskhovrebov ◽  
L.N. Zherikhina ◽  
M.L. Norton
Keyword(s):  
Temperature Dependence ◽  
Phonon Scattering ◽  
High Tc ◽  
Electron Phonon Scattering

Is potassium a simple metal?

1982 ◽  
Vol 60 (5) ◽  
pp. 693-702 ◽  
Author(s):  
Nathan Wisbr
Keyword(s):  
Electrical Resistivity ◽  
Electron Scattering ◽  
Phonon Scattering ◽  
Measured Data ◽  
The Other ◽  
Simple Metal ◽  
Temperature Dependent ◽  
Dependent Part ◽  
Simple Behavior ◽  
Electron Phonon Scattering

The temperature-dependent part of the electrical resistivity ρ(T) of a metal consists of the sum of two terms, one term being due to electron–phonon scattering ρcp(T) and the other term being due to electron–electron scattering ρcc(T). One may write[Formula: see text]where θD, is the Debye temperature of the metal and the coefficients C and A give the magnitudes of ρcp(T) and ρcc(T), respectively. For a metal whose electrical resistivity exhibits "simple" behavior, it had been expected that the measured data for ρ(T) would have the following properties. (i) The function f(T/θD) should approach (T/θD) for [Formula: see text]. (ii) The magnitude of the coefficient C should be the same, or nearly so, for all measured samples. (iii) The magnitude of the coefficient A should be the same, or nearly so, for all measured samples.The low-temperature ρexpt(T) data for potassium, which has by now been measured for many samples, exhibit none of these three properties. A discussion will be presented of the reasons for this "non-simple" behavior of ρexpt(T) for potassium.

Using Theoretical and Computational Models to Understand How Metals Function as Temperature Sensors

2016 ◽  
pp. 668-702
Author(s):  
Fred Lacy
Keyword(s):  
Experimental Data ◽  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Computational Models ◽  
Theoretical Models ◽  
Temperature Sensors ◽  
Atomic Level ◽  
Atomic Motion ◽  
Temperature Changes ◽  
Theoretical And Computational Models

Electrical conductivity is a basic property of materials that determines how well the material conducts electricity. However, models are needed that help explain how conductors function as their size and temperature changes. This research demonstrates and explains how important atomic motion is in understanding electrical conductivity for conductors (and thus the ability of metals to function as temperature sensors). A derivation is performed (on an atomic level) that provides a theoretical relationship between electrical resistivity, temperature, and material thickness. Subsequently, computational models are used to determine the optimal parameters for the theoretical models as well as the conditions under which they are accurate. Comparisons are performed using experimental data showing that the models are valid and accurate.

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