Alternating-current electrodeposition (metafuse) process for forming thallium-oxide superconductors

1995 ◽  
Vol 251 (1-2) ◽  
pp. 105-109 ◽  
Author(s):  
R.N. Bhattacharya ◽  
M. Paranthaman
Keyword(s):  
Alternating Current ◽  
Oxide Superconductors ◽  
Thallium Oxide

Superconducting Thallium Oxide and Mercury Oxide Films

2000 ◽  
Vol 659 ◽  
Author(s):  
Raghu N. Bhattacharya ◽  
S. L. Yan ◽  
Zhongwen Xing ◽  
Yiyuan Xie ◽  
Judy Z. Wu ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Optical Imaging ◽  
Critical Current ◽  
Current Density ◽  
Transport Critical Current Density ◽  
Oxide Superconductors ◽  
Zero Field ◽  
Oxide Superconductor ◽  
Mercury Oxide ◽  
Thallium Oxide

ABSTRACTPreviously we reported on a two-layer electrodeposition process of thallium oxide superconductors that showed transport critical current density above 106 A/cm2 at 77 K in zero field. In this article, we report our effort to convert an electrodeposited thick film of (Tl,Bi,Pb)2(Sr,Ba)2Ca1Cu2Ox to (Hg,Bi,Pb)2(Sr,Ba)2Ca1Cu2Ox by the cation-exchange process. We are also reporting magneto-optical imaging data on Tl oxide superconductor films, which are compared with YBCO. Magneto-optical imaging provides insight into the nature of current flow in the Tl oxide superconductor, and thus, will help us to improve the critical current density in bulk high-temperature superconductor wire or tape.

Relations Between Structure and Tc In 123,124 and Thallium Oxide Superconductors

1989 ◽  
Vol 156 ◽  
Author(s):  
A.W. Hewat ◽  
E.A. Hewat ◽  
P. Bordet ◽  
J.J. Capponi ◽  
C. Chaillout ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxygen Content ◽  
Structural Changes ◽  
Oxide Superconductors ◽  
Significant Shift ◽  
Precise Method ◽  
Bond Lengths ◽  
Thallium Oxide

ABSTRACTSmall structural changes accompany important changes in Tc in some materials. In YBa2Cu3O6+x, Cava et al. have shown that oxidation to YBa2Cu3O7 involves a significant shift of the oxygen bridging CuO-chains and CuO-planes toward the latter. In YBa2Cu4O8, Kaldis et al. have shown that a similar effect is produced with pressure alone. In both cases, Tc increases strongly. In TI2Ba2Cu1O6, Tc varies greatly depending on the precise method of preparation, though the stoechiometry appears unchanged. In this case, Tc may depend on subtle differences in oxygen content, and perhaps Cu-O bond lengths. These effects can be discussed in terms of charge transfer between intercalated layers of CuO-chains or TIO-planes, and conducting CuO-planes.

Processing of thick-film electrodeposited thallium oxide superconductors

1993 ◽  
Vol 211 (3-4) ◽  
pp. 475-485 ◽  
Author(s):  
R.N. Bhattacharya ◽  
P.A. Parilla ◽  
R.D. Blaugher
Keyword(s):  
Thick Film ◽  
Oxide Superconductors ◽  
Thallium Oxide

scholarly journals Specific Heat of Thallium Oxide Superconductors

2020 ◽  
pp. 451-476
Author(s):  
Robert A. Fisher ◽  
Norman E. Phillips ◽  
Joel E. Gordon
Keyword(s):  
Specific Heat ◽  
Oxide Superconductors ◽  
Thallium Oxide

The measurement of thin-film reaction layers with high-resolution FESEM

1995 ◽  
Vol 53 ◽  
pp. 330-331
Author(s):  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Reaction Layer ◽  
Product Layer ◽  
Buffer Layers ◽  
Oxide Superconductors ◽  
Rate Limiting Step ◽  
Ceramic Thin Film ◽  
Backscattered Electron ◽  
Boundary Reaction

Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

Atomic resolution AEM (ARAEM) of oxide superconductors

1992 ◽  
Vol 50 (1) ◽  
pp. 74-75
Author(s):  
Vinayak P. Dravid ◽  
H. Zhang ◽  
L.D. Marks ◽  
J.P. Zhang
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Atomic Resolution ◽  
Oxide Superconductors ◽  
Electron Holography ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Point To Point ◽  
Single Instrument ◽  
Better Than

A 200 kV cold field emission gun atomic resolution analytical electron microscope (ARAEM, Hitachi HF-2000) has been recently installed at Northwestern. The ARAEM offers an unprecedented combination of atomic structure imaging of better than 0.20 nm nominal point-to-point resolution and about 0.10 nm line resolution, alongwith nanoscale analytical capabilities and electron holography in one single instrument. The ARAEM has been fully functional/operational and this paper presents some illustrative examples of application of ARAEM techniques to oxide superconductors. Additional results will be presented at the meeting.

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