Preparation of PZT ferroelectric thin films by sol—gel processing and their properties

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

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Size Effects and Domains in Ferroelectric Thin Film Actuators

MRS Proceedings ◽

10.1557/proc-433-363 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 36

Author(s):

S. Trolier-Mckinstry ◽

C. A. Randall ◽

J. P. Maria ◽

C. Theis ◽

D. G. Schlom ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Domain Walls ◽

Sol Gel ◽

Ferroelectric Thin Film ◽

Ferroelectric Thin Films ◽

Grain Sizes ◽

Average Grain Size ◽

Ferroelectric Domains ◽

Gel Processing

AbstractFerroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.

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Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing

Bulletin of Materials Science ◽

10.1007/s12034-013-0499-3 ◽

2013 ◽

Vol 36 (3) ◽

pp. 389-393 ◽

Cited By ~ 5

Author(s):

HUA WANG ◽

LI LIU ◽

JI-WEN XU ◽

CHANG-LAI YUAN ◽

LING YANG

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Sol Gel ◽

Ferroelectric Thin Films ◽

Bi Doping ◽

Gel Processing

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Ferroelectric thin films prepared by sol-gel processing

Integrated Ferroelectrics ◽

10.1080/10584589208215563 ◽

1992 ◽

Vol 1 (1) ◽

pp. 17-42 ◽

Cited By ~ 138

Author(s):

Yuhuan Xu ◽

John D Mackenzie

Keyword(s):

Thin Films ◽

Sol Gel ◽

Ferroelectric Thin Films ◽

Gel Processing

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Ferroelectric Thin Films by sol-gel Processing

MRS Proceedings ◽

10.1557/proc-152-227 ◽

1989 ◽

Vol 152 ◽

Cited By ~ 23

Author(s):

S. L. Swartz ◽

P. J. Melling ◽

C. S. Grant

Keyword(s):

Thin Films ◽

Single Crystal ◽

Sol Gel ◽

Fused Silica ◽

Ferroelectric Materials ◽

Ferroelectric Thin Films ◽

Silicon Substrates ◽

Heat Treated ◽

Pzt Films ◽

Gel Processing

ABSTRACTThe sol-gel processing of ferroelectric thin films is being investigated at Battelle. The ferroelectric materials included in this study are PbTiO3, Pb(Zr, Ti)O3 (PZT), and KNbO3. The sol-gel processing and crystallization of these films on fused silica, silicon, alumina, and single crystal SrTiO3 substrates is described.Sol-gel derived PbTiO3 thin films crystallized into the expected tetragonal perovskite structure when heated to 500 C and above. However, the crystallization of sol-gel PZT (20/80) thin films was found to be substratedependent. The heat-treated PZT films were amorphous when deposited on silica and silicon substrates. Crystalline perovskite PZT films were produced on alumina substrates, and epitaxial PZT films were produced on single-crystal SrTiO3. Heat treatment of sol-gel KNbO3 films on silicon and alumina substrates resulted in the crystallization of a variety of non-perovskite phases, but epitaxial growth of KNbO3 was observed on single crystal SrTiO3.

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