Growth and Characterization of Structural and Optical Properties of Polar and Non-polar GaN Quantum Dots

2008 ◽  
pp. 201-229
Author(s):  
B. Gayral ◽  
B. Daudin
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties

Advances in the growth and characterization of Ge quantum dots and islands

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties ◽  
Ge Quantum Dots

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Recent Progress ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties

ABSTRACTWe review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.

Structural and optical properties of upconversion CuInS/ZnS quantum dots

2018 ◽  
Vol 86 ◽  
pp. 545-549 ◽  
Author(s):  
Magdy Ali ◽  
Jehan El Nady ◽  
Shaker Ebrahim ◽  
Moataz Soliman
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

2007 ◽  
Vol 101 (2) ◽  
pp. 024918 ◽  
Author(s):  
B. Alloing ◽  
C. Zinoni ◽  
L. H. Li ◽  
A. Fiore ◽  
G. Patriarche
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Density ◽  
Structural And Optical Properties
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