Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 485-488 ◽  
Author(s):  
Masataka Satoh ◽  
Takeshi Jinushi ◽  
Tohru Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Amorphous Layer ◽  
Doping Profile ◽  
Structural And Electrical Properties ◽  
Defective Region ◽  
Small Change ◽  
Ion Implanted

We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped doping profile (NP: 6 x 1020/cm3, thickness: 400 nm, ion dose: 1.6 x 1016/cm2, room temperature). RBS measurement reveals that the highly defective region is formed by P ion implantation, which remains even after annealing at 1700 oC. X-TEM observation shows the P ion induced amorphous layer is recrystallized to twinned-3C-SiC. After annealing at 1300 oC, a sheet resistance of 950 /sq. and sheet carrier concentration of 1 x 1015/cm2 was obtained. By increasing the annealing temperature from 1500 to 1700 oC, the sheet resistance was drastically decreased to about 200 /sq., while there was a small change in the sheet carrier concentration. For the sample annealed at 1700 oC, the electrical activity of the P impurity was estimated to be about 10 % which is comparable to the case of hot implanted sample.

Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy

2006 ◽  
Vol 955 ◽  
Author(s):  
Masataka Satoh ◽  
T Saitoh ◽  
K Nomoto ◽  
T Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Hall Effect Measurement ◽  
Ion Energy ◽  
Dose Ranging ◽  
Van Der Pauw ◽  
Induced Defects ◽  
Ion Implanted

ABSTRACTThe sheet resistance and sheet carrier concentration for Si ion implanted GaN have been investigated as a function of Si ion dosages and ion's energy using van der Pauw method and Hall effect measurement. Si ion implanted GaN is annealed at 1200 °C for 10 sec in N2 gas flow with 50 nm-thick SiNx cap layer to avoid dissociation of GaN. For Si ion energy of 30 keV, the sheet resistance is decreased from 103 to 56 ohm/sq. for the dose ranging from 1 × 1014 to 2 × 1015/cm2. For the Si dose larger than 2 × 1015/cm2, the sheet carrier concentration is saturated around 1 ×s 1015/cm2. Si ion implanted GaN with energy of 50, 80, and 120 keV at a dose of 2 × 1015/cm2 also reveal the sheet carrier concentration of about 1 × 1015/cm2 with the decrease of electron mobility. It is suggested that the implanted Si donors are strongly compensated by the residual implantation-induced defects.

Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate

2007 ◽  
Vol 556-557 ◽  
pp. 579-582 ◽  
Author(s):  
Etsushi Taguchi ◽  
Yu Suzuki ◽  
Masataka Satoh
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Annealing Temperature ◽  
Hall Effect Measurement ◽  
Inductive Heating ◽  
Ar Gas ◽  
P Type ◽  
Ion Implanted

The electrical properties of N ion implanted 3C-SiC(100) have been investigated by means of Hall effect measurement. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 2.4×1015 cm-2 at room temperature, which corresponds to the doping layer with a N concentration of 1×1020 cm-3 and a thickness of 250 nm. The implanted sample is annealed by RF inductive heating annealer at temperature ranging from 1000 to 1500 oC for 10 min in Ar gas flow. The sample annealed at 1000 oC shows the sheet resistance of 1 k./sq. The sheet resistance of the implanted sample is decreased with the increase of annealing temperature. The sample annealed at 1500 oC shows the sheet resistance of 81 ./sq. and the sheet carrier concentration of 1.6×1015 cm-2. The electrical activity of implanted N impurity is estimated to be 68 %, which is much larger than that of N ion implanted 4H-SiC (about 0.9 %). The higher electrical activity of implanted N impurity is attributed to the shallower donor level than that in 4H-SiC.

Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

2012 ◽  
Vol 608-609 ◽  
pp. 1314-1317 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Ching Fang Tseng ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
Chun Hung Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Light Emitting Diodes ◽  
Thermal Evaporation ◽  
Light Emitting ◽  
Znte Thin Films

The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×1015cm-3and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm2V-1S-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes

Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

2007 ◽  
Vol 556-557 ◽  
pp. 575-578 ◽  
Author(s):  
Kenneth A. Jones ◽  
M.C. Wood ◽  
T.S. Zheleva ◽  
K.W. Kirchner ◽  
Michael A. Derenge ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Structural And Electrical Properties ◽  
Ion Implanted

4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.

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