Ion implantation effects in pulsed laser deposited tungsten carbide films

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Download Full-text

Wear Resistance Improvement of Cemented Tungsten Carbide Deep-Hole Drills after Ion Implantation

Materials ◽

10.3390/ma14020239 ◽

2021 ◽

Vol 14 (2) ◽

pp. 239

Author(s):

Dmitrij Morozow ◽

Marek Barlak ◽

Zbigniew Werner ◽

Marcin Pisarek ◽

Piotr Konarski ◽

...

Keyword(s):

Ion Implantation ◽

Tungsten Carbide ◽

Photoelectron Spectroscopy ◽

Secondary Ion Mass Spectrometry ◽

Carbon Layer ◽

Hole Drilling ◽

Deep Hole ◽

Tungsten Nitrides ◽

Lubrication Effect ◽

Secondary Ion

The paper is dedicated to the lifetime prolongation of the tools designed for deep-hole drilling. Among available methods, an ion implantation process was used to improve the durability of tungsten carbide (WC)-Co guide pads. Nitrogen fluencies of 3 × 1017 cm−2, 4 × 1017 cm−2 and 5 × 1017 cm−2 were applied, and scanning electron microscope (SEM) observations, energy dispersive spectroscopy (EDS) analyses, X-ray photoelectron spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements were performed for both nonimplanted and implanted tools. The durability tests of nonimplanted and the modified tools were performed in industrial conditions. The durability of implanted guide pads was above 2.5 times more than nonimplanted ones in the best case, presumably due to the presence of a carbon-rich layer and extremely hard tungsten nitrides. The achieved effect may be attributed to the dissociation of tungsten carbide phase and to the lubrication effect. The latter was due to the presence of pure carbon layer with a thickness of a few dozen nanometers. Notably, this layer was formed at a temperature of 200 °C, much smaller than in previously reported research, which makes the findings even more valuable from economic and environmental perspectives.

Download Full-text

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

MRS Proceedings ◽

10.1557/proc-1-407 ◽

1980 ◽

Vol 1 ◽

Author(s):

S.W. Chiang ◽

Y.S. Liu ◽

R.F. Reihl

Keyword(s):

Ion Implantation ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

A Cell ◽

Ft Ir ◽

Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

Download Full-text