Growth studies of heteroepitaxial oxide thin films using reflection high-energy electron diffraction (RHEED)

2015 ◽  
pp. 3-29 ◽  
Author(s):  
G. Koster ◽  
M. Huijben ◽  
A. Janssen ◽  
G. Rijnders
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Oxide Thin Films ◽  
Growth Studies ◽  
Heteroepitaxial Oxide

scholarly journals In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction

2003 ◽  
Vol 52 (10) ◽  
pp. 2601
Author(s):  
Chen Ying-Fei ◽  
Peng Wei ◽  
Li Jie ◽  
Chen Ke ◽  
Zhu Xiao-Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Oxide Thin Films

Reflection high-energy electron diffraction based texture determination: Magnetic thin films for perpendicular media

2000 ◽  
Vol 87 (9) ◽  
pp. 5693-5695 ◽  
Author(s):  
Dmitri Litvinov ◽  
J. Kent Howard ◽  
Sakhrat Khizroev ◽  
Heng Gong ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Magnetic Thin Films ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Perpendicular Media

Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

1999 ◽  
Vol 585 ◽  
Author(s):  
T. Matsumoto ◽  
K. Mimoto ◽  
M. Kiuchi ◽  
S. Sugimoto ◽  
S. Goto
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Diffraction ◽  
Ion Beam ◽  
High Energy ◽  
Energy Electron ◽  
Surface Structures ◽  
High Energy Electron ◽  
Molecular Ion ◽  
Beam Technique

AbstractSiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH3+). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.

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