scholarly journals The Reflection High Energy Electron Diffraction and X-ray Photoelectron Spectroscopy Studies of CeO2 Thin Films on Bi-based Superconducting Bulk Single Crystals.

Shinku ◽  
1994 ◽  
Vol 37 (3) ◽  
pp. 183-186
Author(s):  
Yusuke GOTO ◽  
Hiroyuki TSUCHIDA ◽  
Heizo TOKUTAKA ◽  
Satoru KISHIDA ◽  
Kikuo FUJIMURA ◽  
...  
2002 ◽  
Vol 34 (1) ◽  
pp. 320-323 ◽  
Author(s):  
V. V. Atuchin ◽  
V. G. Kesler ◽  
N. Yu. Maklakova ◽  
L. D. Pokrovsky ◽  
V. N. Semenenko

1997 ◽  
Vol 474 ◽  
Author(s):  
J. F. Anderson ◽  
Markus Kuhn ◽  
Ulrike Diebold ◽  
K. Shaw ◽  
P. Stroyanov ◽  
...  

ABSTRACTWe have investigated the structural and compositional changes that are induced by the segregation of substrate Mg to the surface of 1μm-thick Fe3O4 films on MgO(001). The thin films have been grown with plasma-assisted MBE, and characterization with RHEED (reflection high-energy electron diffraction), x-ray diffraction (XRD), and Superconducting Quantum Interference Device (SQUID) magnetometry show slightly strained, single-crystalline Fe3O4 films. For the surface studies, we have combined Low-Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM). Initial and final surface characterization employed X-ray Photoelectron Spectroscopy (XPS) and Ion Scattering Spec-troscopy (ISS) respectively. The surfaces of the MBE-grown samples are flat and show a (√2 × √2)R45° reconstruction with respect to the Fe3O4 surface unit cell. We observe the onset of Mg segregation to the surface at around 700 K, with long, narrow extensions of terraces being observed growing along the [110] and [110] directions. Upon prolonged heating at 800 K, massive Mg segregation to the surface is observed. Heating in an oxygen atmosphere induces a 1×4 surface reconstruction, and results in extremely long (≈ 1000 Å), wide terraces.


2003 ◽  
Vol 782 ◽  
Author(s):  
Kevin A. Boulais ◽  
Francisco Santiago ◽  
Karen J. Long ◽  
Victor H. Gehman

ABSTRACTThe formation of a Ba-Te surface on GaAs has been investigated. The surface was created using molecular beam epitaxy (MRS). A GaAs (100) surface was first exposed to Te and characterized using x-ray photoelectron spectroscopy (XPS), reflective high energy electron diffraction (RHEED) and low energy electron diffraction (LEED). The Te-reacted surface was then exposed to BaF2 flux producing a second reaction. In this reaction, the BaF2 dissociated leaving barium on the surface but no fluorine. This is in contrast to the clean (no tellurium) GaAs (100) surface in which BaF2 has been shown to grow single crystal. Although high order exists during early stages of the Ba-Te growth, further exposure gives way to a polycrystalline form. This paper discusses the formation and analysis of the Ba-Te surface.


2000 ◽  
Vol 87 (9) ◽  
pp. 5693-5695 ◽  
Author(s):  
Dmitri Litvinov ◽  
J. Kent Howard ◽  
Sakhrat Khizroev ◽  
Heng Gong ◽  
David Lambeth

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