Observation of recovery and recrystallization in high-purity aluminum measured with forward modeling analysis of high-energy diffraction microscopy

2012 ◽  
Vol 60 (10) ◽  
pp. 4311-4318 ◽  
Author(s):  
Christopher M. Hefferan ◽  
Jonathan Lind ◽  
Shiu Fai Li ◽  
Ulrich Lienert ◽  
Anthony D. Rollett ◽  
...  
2012 ◽  
Vol 715-716 ◽  
pp. 447-454 ◽  
Author(s):  
C. M. Hefferan ◽  
S. F. Li ◽  
J. Lind ◽  
Ulrich Lienert ◽  
Anthony D. Rollett ◽  
...  

We have used high energy x-ray diffraction microscopy (HEDM) to study annealing behavior in high purity aluminum. In-situ measurements were carried out at Sector 1 of the Advanced Photon Source. The microstructure in a small sub-volume of a 1 mm diameter wire was mapped in the as-received state and after two differential anneals. Forward modeling analysis reveals three dimensional grain structures and internal orientation distributions inside grains. The analysis demonstrates increased ordering with annealing as well as persistent low angle internal boundaries. Grains that grow from disordered regions are resolution limited single crystals. Together with this recovery behavior, we observe subtle motions of some grain boundaries due to annealing.


2010 ◽  
Vol 25 (2) ◽  
pp. 132-137 ◽  
Author(s):  
C. M. Hefferan ◽  
S. F. Li ◽  
J. Lind ◽  
R. M. Suter

Verification tests of the forward modeling technique for near-field high energy X-ray diffraction microscopy are conducted using two simulated microstructures containing uniformly distributed orientations. Comparison between the simulated and reconstructed microstructures is examined with consideration to both crystallographic orientation and spatial geometric accuracy. To probe the dependence of results on experimental parameters, simulated data sets use two different detector configurations and different simulated experimental protocols; in each case, the parameters mimic the experimental geometry used at Advanced Photon Source beamline 1-ID. Results indicate that element orientations are distinguishable to less than 0.1°, while spatial geometric accuracy is limited by the detector resolution.


Author(s):  
R. M. Suter ◽  
C. M. Hefferan ◽  
S. F. Li ◽  
D. Hennessy ◽  
C. Xiao ◽  
...  

We describe our recent work on developing X-ray diffraction microscopy as a tool for studying three dimensional microstructure dynamics. This is a measurement technique that is demanding of experimental hardware and presents a challenging computational problem to reconstruct the sample microstructure. A dedicated apparatus exists at beamline 1-ID of the Advanced Photon Source for performing these measurements. Submicron mechanical precision is combined with focusing optics that yield ≈2μmhigh×1.3mm wide line focused beam at 50keV. Our forward modeling analysis approach generates diffraction from a simulated two dimensional triangular mesh. Each mesh element is assigned an independent orientation by optimizing the fit to experimental data. The method is computationally demanding but is adaptable to parallel computation. We illustrate the state of development by measuring and reconstructing a planar section of an aluminum polycrystal microstructure. An orientation map of ∼90 grains is obtained along with a map showing the spatial variation in the quality of the fit to the data. Sensitivity to orientation variations within grains is on the order of 0.1deg. Volumetric studies of the response of microstructures to thermal or mechanical treatment will soon become practical. It should be possible to incorporate explicit treatment of defect distributions and to observe their evolution.


Author(s):  
E. B. Steel

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.


1991 ◽  
Vol 3 (1) ◽  
pp. 69-80
Author(s):  
S. B. Peralta ◽  
S. C. Ellis ◽  
C. Christofides ◽  
A. Mandeiis ◽  
H. Sang ◽  
...  

1976 ◽  
Vol 10 (2) ◽  
pp. 189-194 ◽  
Author(s):  
Nahum Nir ◽  
Edward W. Hart ◽  
Che-Yu Li

2005 ◽  
Vol 55 (3) ◽  
pp. 142-146
Author(s):  
Harushige TSUBAKINO ◽  
Yuichiro YAMAMOTO ◽  
Atsushi YAMAMOTO ◽  
Michitaka TERASAWA ◽  
Tohru MITAMURA ◽  
...  

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